2SD1616 UTC | Alldatasheet
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UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-008,A NPN EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
*Audio frequency power amplifier *Medium speed switching TO-92 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Storage Temperature Tstg -55 ~+150 °C Junction Temperature Tj 150 °C Total Power Dissipation (Ta=25°C) Pc 750 mW Collector to Base Voltage: D1616 D1616A VCBO 60 120 V Collector to Emitter Voltage: D1616 D1616A VCEO 50 V Emitter to Base Voltage VEBO 6 V Collector Current (DC) Ic 1 A Collector Current (*Pulse) Ic 2 A Note: (*) Pulse width≤10ms, Duty cycle<50% CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-Off Current ICBO VCB=60V 100 nA Emitter Cut-Off Current IEBO VEB= 6V 100 nA Collector-Emitter Saturation Voltage VCE(SAT) IC=1A, IB=50mA 0.15 0.3 V Base-Emitter Saturation Voltage VBE(SAT) IC=1A, IB=50mA 0.9 1.2 V Base Emitter On Voltage VBE(ON) VCE=2V, IC=50mA 600 640 700 mV DC Current Gain: D1616 D1616A hFE1 VCE=2V, IC=100mA 135 135 600 400 hFE2 VCE=2V, IC=1A 81 Current Gain Bandwidth Product fT VCE=2V, IC=100mA 100 160 MHz Output Capacitance Cob VCB=10V, f=1MHz 19 pF Turn On Time ton VCE=10V, IC=100mA 0.07 us
UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-008,A CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Storage Time ts IB1=-IB2=10mA 0.95 us Fall Time tf VBE(off)=-2～-3V 0.07 us Classification of hFE1 RANK Y G L hFE1 135-270 200-400 300-600
UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R201-008,A