2SD1616 NEC | Alldatasheet
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NIEC NPN SILICON TRANSISTORS / 2SD1616, 2SD1616A DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application. PACKAGE DIMENSIONS in millimeters . 5.2 MAX. FEATURES © Low Collector Saturation Voltage. Veeisat) = 0.15 V TYP. (@ Ic = 1.0 A, Ip = 50 mA) | | © High Break Down Voltage. Vceo = 50 V/60 V (2SD1616/2SD1616A) © High Total Power Dissipation. : Py = 0.75 W (Tg = 25°C) © Complementary to the NEC 2SB1116/2SB1116A PNP Transis- “ WH if ABSOLUTE MAXIMUM RATINGS k { a Maximum Temperatures Maximum Power Dissipation (T, = 25 °C) (iii\\l Maximum Voltages and Currents (T, = 25 °C) 2SD1616/2SD1616A ERY *PW <10 ms, Duty Cycle $50 % ELECTRICAL CHARACTERISTICS (Ta = 25 °C) 2SD1616/2SD1616A beei DC Current Gain 135 » 600 - Vee = 2.0 V, Ic = 100 mA hee2 DC Current Gain 81 - Voce =2.0V,1¢=1.0A fr Gain Bandwidth Product 100 160 MHz Vce = 2.0 V, I¢ = 100 mA Cob Output Capacitance 19 pF Vcog=10V, Ie =0, f= 1.0 MHz 'cBo Collector Cutoff Current 100 nA Veg =60 V/120 V, Ie = 0 leBo Emitter Cutoff Current 100 nA Veg=6.0V, Ic =0 ) Vee Base to Emitter Voltage 600 700 mV VcE=2.0V, I¢=50mA | VcE(sat) Collector Saturation Voltage 0.15 03 Vv Ic = 1.0 A, Ig = 50 mA. | Vpelsat) Base Saturation Voltage 0.9 1.2 v I¢ = 1.0 A, Ig = 50 mA ton Turn-On Time 0.07 us Voc = 10 V, Ig = 100 mA’ tstg Storage Time 0.95 us (ss =—Ig2=10mA ) tf Fall Time 0.07 us VBE (off) =-2t03 V Pulsed PW $350 us, Duty Cycle 52% Classification of hre1 [Fork [ok fT ok Te | [range | 12510370 | a20w400 | 30020600 | | Test Conditions: Veg = 2.0 V, Ic = 100mA a 478
NEC 2SD1616,2SD1616A | gig | TYPICAL CHARACTERISTICS (Tq = 25 °C) | SAFE OPERATING AREAS TOTAL POWER DISSIPATION vs. (TRANSIENT THERMAL RESISTANCE COLLECTOR CURRENT vs. : AMBIENT TEMPERATURE METHOD) COLLECTOR TO EMITTER VOLTAGE = “LLL. Le oa oom 00 aa ee | oo | 5 0 — Joo oi Feo eH : C0 af] Tr) COUN TE ro 2 — ! See tm eee
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oF 5 VESSSHRNGH 6 “CTT LO ew. tN sg, SU ® a 5 3 ee VN 7-03 s 8 =e Gl of LT CCCP PS) «61 SHS) Ce . re WC os os rE io ooo TH SSH COP Tg—Ambient Temperature —*C Ly TTT TY | o 2 4 6 8 10 oo Vce—Collector to Emitter Voltage—V VcE-Collector to Emitter Voltage—V . COLLECTOR AND BASE SATURA- COLLECTOR SO Ce NTES VOLTAGE CoLLectoN CONNER T . i TION VOLTAGE vs. COLLECTOR 1.05 = 1000p ry Wx SS ave-e0v] 1S of MTom mYpercS| somal | sok ed 88 Tl eso Wr 271 |] Se £ 5 Lt TT 4 (Z4E== 5 . Soci ecst ames: & WY eee SS C=» IIs 8 os =a SC e| (AR BLU CTI TTT) 3 8 earth aceettiieemastit 8 “Tf Td Sy oS a oA] 2 SSS aa) Fo 000 Clem cic til 8 tees CoAT rth § 3° sae ssorez os 2s io A 2 Ee y AGEEEEEEEE i TUM CTI Ti es I¢Collector Current —A oO 02 04 0.6 08 10 0.01002 0050102 05 1 2 5 10 Vce—Collector to Emitter Voltage—V \\¢—Collector Current—A SWITCHING TIME vs. GAIN BANDWIDTH PRODUCT vs. COLLECT nS eA vt ace COLLECTOR CURRENT Se CURRENT 100 CA a ce 2 OS SS vee-20] Se io | . To Feu teit soo od gg gti aed 2 ode COMIN | E SH Si icaseemaiiil east | 2 6 ESS See 2 PK 2 Se gl N i i | mu PU SESS oe s eee LI a Seetaee cena Ce LC Ser ooe aoe or oe coe a re 2 30-oo Ig~Collector Current 0.01002°0.050102 05 1 2 5 10 Itage—V i¢—Collector Current—A Vep—Collector to Base Voltage | 479