D15XB60 EIC | Alldatasheet
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Technical content
D15XB60 SILICON BRIDGE RECTIFIER PRV : 600 Volts Io : 15 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT Maximum Recurrent Peak Reverse Voltage VRM 600 V Maximum Average Forward Current With heatsink, Tc = 100 °C 15 (50Hz Sine wave, R-load ) Without heatsink, Ta = 25 °C 3.2 Maximum Peak Forward Surge Current, Tj = 25 °C (50Hz sine wave, Non-repetitive 1 cycle peak value) Current Squared Time at 1ms ≤ t < 10 ms, Tc = 25 °C I 2t 110 A2S Maximum Forward Voltage per Diode at IF = 7.5 A ( Pulse measurement, Rating of per diode) Maximum DC Reverse Current, V R=VRM ( Pulse measurement, Rating of per diode) Maximum Thermal Resistance, Junction to case, With heatsink R ӨJC 1.5 °C/W Maximum Thermal Resistance, Junction to Ambient, Without heatsink RӨJA 22 °C/W Maximum Thermal Resistance, Junction to Lead, Without heatsink RӨJL 5 °C/W Operating Junction Temperature TJ 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Page 1 of 2 Rev. 00 : August 22, 2007 1.1 V IR 10 μA RATING IFSM 200 A IO A VF RBV25 Dimensions in millimeters C3 4.9 ± 0.2 3.9 ± 0.2 ∅ 3.2 ± 0.1 11 ± 0.2 17.5 ± 0.5 20 ± 0.3 0.7 ± 0.1 1.0 ± 0.1 2.0 ± 0.2 30 ± 0.3 7.5 ±0.2 ±0.2 7.5 ±0.2 13.5 ± 0.3 www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( D15XB60 ) FIG.1 - DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 80 90 100 110 # 120 # 130 # 140 # 150 1 10 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES (CYCLES) FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - POWER DISSIPATION PER DIODE FORWARD VOLTAGE, (V) Page 2 of 2 Rev. 00 : August 22, 2007 100 200 0 0 150 100 0.1 1.0 PEAK FORWARD SURGE CURRENT, (A) AVERAGE RECTIFIER FORWARD CURRENT, (A)FORWARD CURRENT, (A) Tc = 25 °C Sine wave, R-load on heatsink AVERAGE RECTIFIED CURRENT, (A) (A) 200 5 10 25 POWER DISSIPATION , (W) Sine wave TJ = 150 °C www.eicsemi.com