2SD1415A TOSHIBA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS tot03 $32402 27402 ——S —y a Ez = e@ = =©High DC Current Gain 4 = td Z| : bpp = 2000 (Min.) (Vog = 3V, Ig = 3A) | | | 2 e@ Low Saturation Voltage : VOR (sat)= 1.5 V (Max.) (Ig = 3 A) “ iM ITT, I MAXIMUM RATINGS (Ta = 25°C) | a | 0.750.151 1 Hl CHARACTERISTIC SYMBOL UNIT y u 2.544 0.25 2.5440.25 Collector-Base Voltage VCBO e Collector-Emitter Voltage VCEO S. sy a] Emitter-Base Voltage VEBO [6 | v | Fa a ° . Collector Current 1, BASE 2. COLLECTOR Collector Power Ta = 25°C [ 20 | Pi JEDEC _- Dissipation Te=250 | °C w Junction Temperature EIA = Storage Temperature Range —55~150 TOSHIBA 2-10R1A EQUIVALENT CIRCUIT COLLECTOR BASE | pare ' | <5kO ~1500 H EMITTER Q61001EAA @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of fafety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent’ products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual Property or other rights of TOSHIBA CORPORATION or others @ The information contained herein is subject to change without notice. 1999-07-09 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xan. | rye. [max.[unzr] Collector Cut-off Current Vos = 100V, Ig =0 | — | — [| 100] pA | Emitter Cut-off Current IEBO VeEB = 6V, Ic = 0 [0.75 | — | 3.0[ mA | Collector-Emitter DC Current Gain Collector-Emitter ae ee I Base-Emitter Saturation Ea maw foronmcem |= | wl wp | . ---QUTPUT Turn-on Time| ton 20s IBif t Switchi ier PUT tng | 13 Tine mad Storage Time tstg nip Ta t iyo 5.1 HS e Ipg ty , Ip1 = —Ip2 = 6mA, Voc Fall Time t DUTY CYCLES 1% 3 45V 1999-07-09 2/4
common T TT T TT coumen |_|, Jedecés Tisha] eg TT bere e ‘LT plggesrer Tbr i— 16 ? = g - yer e geri t 2 | fee 2 Ll feet | pee | wee ee rr a 26 eee
3 SSS Se ee a
7 oe | PE ol [Pt jf | ff p=etma] a [j_ ++ + i a a COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Veg (V) 10, Io - Vez 100000, bre — Ic 3 | wevee [Digs RHI HHH ete Yor ¥ 8] 1.2 a > e Re seen © sooo TTT JER Pfs 2 ga IT g Zea 3 SH iy
2 GO ft a a> \\ ll |
2 | fe 5 Lo LGN os » Cee) i 6 _ — 4 3 FR 28°0 2 ot-ferr tt tt al in MAL ne 2 ee roo LiTlll 1 | FES HH 0.01 OL 1 10 100 oL MET 0 2 4 6 8 10 COLLECTOR CURRENT Ig (A) COLLECTOR-EMITTER VOLTAGE Vcg (V)
30 VCE (sat) - IC 40 VBE (sat) — IC
[TTT 1 comnow exrrner 8 EET TT common exrrrer ee ff TUT || ores gs 10 5 We ef ae 2 eee Be | beecwre | A I UII a2 | eT [III ae aes? ee era ee eee 8 | | Eg es Soa CITI TIE TTT ee br 1 10 100 ba 1 10 100 COLLECTOR CURRENT Ig (A) COLLECTOR CURRENT Ig (A) 1999-07-09 3/4
Ic - VBE SAFE OPERATING AREA 8 30; coMMON PIII TTT | - [ey feast PTE © TLL SS = 5 {| FNS to mse g NENA 105 i ELV ee Nae S LL ee NSN 4 : 2 AN BLU 6 4 A S 2 ! 2 =F pc operation NE HE 2 |_| fre= 100) [|] PTTL FA [=F Ta = 25°C FANE 8 | 2 Fo AHH y Bo eet AAA LEY PTET a a8 2 eB g \\ eee ae S/N) Bit | AW | ee eer) © sau EH —- NONREPETITIVE PULSE 008) |
0.03 Ta = 25°C
Curves must be doratea | Iinearly with increase in Vogo MAX. ime temperature, 0.01 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE Vcg (V) 1999-07-09 4/4