2SD1409A TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. INDUSTRIAL APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm $3.220.2 2,740.2 i in: = i = = be] ms © = High DC Current Gain : hyZ=600 (Min.) (VoR=2V, Ig=2A) aa © — Monolithic Construction with Built-In Base-Emitter Shunt 3 =e = 25° ws I MAXIMUM RATINGS (Ta = 25°C) i 2) | CHARACTERISTIC SYMBOL | RATING ors al | | 3 | ry | a Collector-Base Voltage Vopo | 600 | VY) yeesoas] | [asnxons Collector-Emitter Voltage VCEO [400 | Vv | © Emitter-Base Voltage VEBO él opel 3 Collector Current Di fs | al : [Base Current | OT A Collector Power Ta=25°C Fre 4 w | ' BASE on Dissipation Te=25°C [25d 3. EMITTER Storage Temperature Range —55~150 JEDEC = EIAT SC-67 TOSHIBA _2-10R1A EQUIVALENT CIRCUIT Weight : 1.7g
9 COLLECTOR
‘ t $ EMITTER @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the mast recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or ‘other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-02-18 1/3
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [ aw. | rve. max. [unre] Collector Cut-off Current Icpo |Vcp=600V, Inp=0 | — | — [| 05 | mA | Emitter Cutoff Current Tgpo[VEB=5V, Ig=0 C= [— | 3] ma Collector-Emitter Breakdown mentors -e [| =[=[* | DO Current Gain Von=2V, Io=4a [x00 = — | Collector-Emitter Saturation vawojeran-emn |= [=[ =] ¥] Base-Emitter Saturation ineleswacom [= [= [sl Emitter-Collector Forward Collector Output Capacitance Vop=50V, Ig=0, f=1MHz | — | 35 [| — | pF | . OUTPUT] itchi Ip1 a rai is Switching a B2! f Time Storage Time tstg Wino {Leda | us . Ip1i= —Ip2=0.04A, Vv Fall Time ‘t purty cycLEs1% — _SSuy 5 1998-02-18 2/3
‘ Ic - VCE 500 hrE - Ic LT sol | common E soot eawoe AR COMMON = bob) aarres a Bias ali EMITTER S Tero | tare © oot ATTN | vee<av_| (Ape 7 [Veter Ee i A e Were 2 og TT NTI
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Pen //20>>_ anne oe g VY 4 sol CT TT WAI 0.01 0.03 01 03 1 3 10 30 BOWE 3 f | COLLECTOR CURRENT Ic (A) HEE He EHH 0 2 4 6 8 10 12 14 16 VBE (sat) — Io COLLECTOR-EMITTER VOLTAGE Vcg (V) “TH COMMON z gs EMITTER BS lO s Fectiee | AEH go SSS ES | LU 7 I || ge Sg Sl EF Ht cee AT ost COI i SP aniese-Alll ta Ee fe ee COLLECTOR CURRENT Io (A
3 OS ESETPE Sib BE 20 SAFE OPERATING AREA
ee cacton cmt ea omcuse x [ll | | T/T] Ig MAX. (PULSED) 3% COLLECTOR CURRENT Ic (A) 10) TRONS ERE] fic Max. SY spo ON DNS «contin WANT IN_A 50083 ‘ LLL AL 5 NANT COMMON EMITTER HEE AEA 2 \\ \\ > K\\\\ \\ s 5] Vor=2V i = Woy Sok CT TART Fa aa SAC occ Bos tet rms RENAE g Mi 8 \\ eee /s ee oso Le FANN AT
2 A g IT pe overanron NUN NTT
Pe retthoedécee § | Lillie NU S /| 3 oot KAA § EEE Efe HH 3 ~ |x sinaue Nonreperimve FREE EEEHE A 8 lx RSS
8 CoCo oo 905] pute Te=25°C ANCE
2 CO 0.09] curves must be deratedtneery | — WH & ELT TTA YT Tt with increase in temperatare NT oll Ay TAT TT TT | oor Vero MAX) 004-08 1a 16-20 3428 3939 T00 B00 ~ 1000 BASE-EMITTER VOLTAGE Vpg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) TTT sss 8598-02-18