3DD13005 SECOS | Alldatasheet
Document overview
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Technical content
4A , 700V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente 2-Nov-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Power switching applications ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage V CBO 700 V Collector to Emitter Voltage V CEO 400 V Emitter to Base Voltage V EBO 9 V Collector Current - Continuous I C 4 A Collector Power Dissipation P C 2 W Junction, Storage Temperature T J, T STG 150, -55~150 ° C
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector to Base Breakdown Voltage V(BR)CBO 700 - - V I C =1mA, I E=0 Collector to Emitter Breakdown Voltage V(BR)CEO 400 - - V I C =10mA, I B=0 Emitter to Base Breakdown Voltage V (BR)EBO 9 - - V I E=1mA, I C =0 Collector Cut – Off Current ICBO - - 1 mA VCB =700V, IE=0 ICEO - - 0.1 V CE =400V, IB=0 Emitter Cut – Off Current I EBO - - 0.05 mA V EB =7V, I C =0 DC Current Gain h FE 20 - 30 VCE =5V, I C =1A 5 - - V CE =5V, I C =10mA Collector to Emitter Saturation Voltage VCE(sat)1 - - 0.3 V I C =1A, I B=0.2A VCE(sat)2 - - 0.8 V I C =4A, I B=1A Base to Emitter Saturation Voltage V BE(sat) - - 1.6 V I C =2A, I B=0.5A Transition Frequency f T 5 - - MHz VCE =10V, I C =500mA, f =1MHz Fall time tF - - 0.6 µs I B1 = -IB2 =0.4A, IC =2A, VCC =120V Storage time t S 1.8 - 6.6 µs I C =0.25A TO-220J