D10XB60H EIC | Alldatasheet
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D10XB60H SILICON BRIDGE RECTIFIER PRV : 600 Volts Io : 10 Amperes FEATURES : * Glass passivated junction chip * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 4.28 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. SYMBOL VALUE UNIT Maximum Peak Reverse Voltage VRM 600 V Maximum Average Forward Current With heatsink, Tc = 112 °C 10 (50Hz Sine wave, R-load ) Without heatsink, Ta = 25 °C 2.9 Maximum Peak Forward Surge Current, Tj = 25 °C (50Hz sine wave, Non-repetitive 1 cycle peak value) Current Squared Time at 1ms ≤ t < 10 ms, TJ = 25 °C I2t 110 A2S Maximum Forward Voltage per Diode at IF = 5.0 A ( Pulse measurement, Rating of per diode) Maximum DC Reverse Current, V R=VRM ( Pulse measurement, Rating of per diode) Maximum Thermal Resistance, Junction to case, With heatsink RӨJC 1.9 °C/W Maximum Thermal Resistance, Junction to Ambient, Without heatsink RӨJA 26 °C/W Maximum Thermal Resistance, Junction to Lead, Without heatsink RӨJL 6 °C/W Operating Junction Temperature TJ 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Page 1 of 2 Rev. 00 : February 5, 2009 1.05 V IR 10 μA VF RATING IFSM 170 A IO A 0.303 (7.7) 0.287 (7.3) Dimensions in inches and (millimeters) 0.075 (1.9) 0.060 (1.5) 0.043 (1.1) 0.035 (0.9) 0.134(3.4) 0.122(3.1) ~~+ 0.150 (3.8) 0.134 (3.4) 0.383(9.7) 0.367(9.3) 0.996 (25.3) 0.972 (24.7) 0.709 (18) 0.669 (17) 0.603(15.3) 0.579(14.7) 0.189 (4.8) 0.173 (4.4) 0.114 (2.9) 0.098 (2.5) 0.032 (0.8) 0.043 (1.1) 0.130(3.7) 0.146(3.3) RBV4 IATF 0060636 SGS TH07/1033 TW00/17276EM TH97/10561QM
RATING AND CHARACTERISTIC CURVES ( D10XB60H ) FIG.1 - DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 80 90 100 110 120 130 140 150 1 10 100 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES (CYCLES) FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - POWER DISSIPATION PER DIODE FORWARD VOLTAGE, (V) Page 2 of 2 Rev. 00 : February 5, 2009 100 200 0 0 150 100 0.1 1.0 PEAK FORWARD SURGE CURRENT, (A) AVERAGE RECTIFIER FORWARD CURRENT, (A)FORWARD CURRENT, (A) Tc = 25 °C Sine wave, R-load with heatsink Tc = 150 °C 12 14 AVERAGE RECTIFIED CURRENT, (A) 80 2 4 10 POWER DISSIPATION , (W) Sine wave TJ = 150 °C IATF 0060636 SGS TH07/1033 TW00/17276EM TH97/10561QM