D10SBS4 SHINDENGEN | Alldatasheet
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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd OUTLINE DIMENSIONS (Unit : mm) RATINGS SHINDENGEN Switching power supply Home Appliances, Office Equipment Telecommunication, Factory Automation APPLICATION Thin Single In-Line Package SBD Bridge Low VF
FEATURES
Case : 3S Schottky Rectifiers (SBD) SBD Bridges Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions RatingsUnit Storage Temperature Tstg -55\`150 Operating Junction TemperatureTj 150 Maximum Reverse VoltageVRM 40 V Repetitive Peak Surge Reverse VoltageVRRSM Pulse width 0.5ms, duty 1/40 45 V Average Rectified Forward CurrentIO 50Hz sine wave, R-load With heatsink Tc=6710 A 50Hz sine wave, R-load Without heatsink Ta=253.4 Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 100 A Repetitive Peak Surge Reverse PowerPRRSM Pulse width 10Ês, Rating of per diode, Tj=25330 W Dielectric Strength VdisTerminals to case, AC 1 minute 2 kV Mounting Torque TOR iRecommended torqueF0.5N¥mj 0.8 N¥m Electrical Characteristics (If not specified Tc=25) Item Symbol Conditions RatingsUnit Forward Voltage VF IF=5A, Pulse measurement, Rating of per diodeMax.0.55V Reverse Current IR VR=VRM , Pulse measurement, Rating of per diodeMax.3.5mA Junction Capacitance Cj f=1MHz, VR=10V, Rating of per diodeTYP 180 pF Æjcjunction to case @@With heatsinkMax.5.5 Thermal Resistance Æjljunction to lead @@ Without heatsinkMax.6/W Æjajunction to ambient Without heatsinkMax.30
0.1 D10SBS4 Tc=150°C [MAX] Tc=25°C [MAX] Pulse measurement per diode Tc=150°C [TYP] Tc=25°C [TYP] Forward Voltage V F [V] Forward Current I F [A]
0.1 1 10 0.05 0.50.2 20 5052 200 500 2000 5000 Reverse Voltage VR [V] Junction Capacitance Cj [pF] f=1MHz Tc=25°C TYP per diode
0.01 0.1 100 1000 0 5 10 15 20 25 30 35 40 D10SBS4 Tc=150°C [MAX] Tc=150°C [TYP] Pulse measurement per diode Tc=125°C [TYP] Tc=100°C [TYP] Tc=75°C [TYP] Reverse Voltage VR [V] Reverse Current I R [mA]
0.3 Reverse Power Dissipation Tj = 150°C SIN 0.2 0.5 D=0.05 DC 0.1 0.8 Reverse Voltage VR [V] Reverse Power Dissipation PR [W] tp VR T D=tp/T
T D=tp/T 0 2 4 6 8 10 12 14 16 D10SBS4 0.3 Forward Power Dissipation Tj = 150°C SIN 0.2 0.1 D=0.8 DC 0.5 0.05 Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]
T D=tp/T 0 20 40 60 80 100 120 140 160 D10SBS4 0.3 Derating Curve VR = 20V SIN 0.2 0.1 D=0.8 DC 0.5 0.05 VR Case Temperature Tc [ °C] Average Rectified Forward Current I O [A]
T D=tp/T 0 20 40 60 80 100 120 140 160 D10SBS4 0.3 Derating Curve VR = 20V SIN 0.2 0.1 D=0.8 DC 0.5 0.05 VR Ambient Temperature Ta [ °C] Average Rectified Forward Current I O [A]
Peak Surge Forward Capability 100 150 1 10 100 D10SBS4 2 5 20 50 IFSM 10ms 10ms 1 cycle Number of Cycles [cycles] Peak Surge Forward Current I FSM [A] non-repetitive, sine wave, Tj=25°C before surge current is applied
0.5IRP VRP IR PRRSM = IRP × VRP 100 120 0 50 100 150 SBD Repetitive Surge Reverse Power Derating Curve Junction Temperature Tj [ °C] PRRSM Derating [%]
0.1 1 10 100 SBD Repetitive Surge Reverse Power Capability Pulse Width tp [µs] PRRSM(tp) / PRRSM(tp=10µs) Ratio tp IRP VR 0.5IRP VRP IR PRRSM = IRP × VRP