D10SB10 SSE | Alldatasheet
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Technical content
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
FEATURES
- Glass passivated junction chip
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic technique
- Surge overload rating: 200 A peak
- High temperature soldering guaranteed: 250 oC/10sec/ 0.375" (9.5mm) lead length at 5 lbs tension MECHANICAL DATA
- Terminal: Plated leads solderable per MIL-STD 202E, method 208C
- Case: UL-94 Class V-O recognized flame retardant epoxy
- Polarity: Polarity symbol marked on body
- Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOL D10SB D10SB D10SB D10SB D10SB D10SB
100 UNITS
VRRM 100 200 400 600 800 1000 V VRMS 70 140 280 420 560 700 V VDC 100 200 400 600 800 1000 V VF V Maximum DC Reverse Current Ta=25oC µA (at rated DC blocking voltage) T a=125oC µA Storage and Operating Junction Temperature TSTG,TJ oC http://www.sse-diode.com D10SB10 THRU D10SB100 -55 to + 150 (Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,derate current by 20%) RATINGS Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current a=70oC) IF(AV) A Peak Forward Surge Current (8.3ms single half sine-wave superimposed on rated load) IFSM 200 A SINGLE PHASE GLASS Maximum Instantaneous Forward Voltage (at forward current 5.0ADC) PASSIVATED SIP BRIDGE RECTIFIER VOLTAGE: 100 TO 1000V CURRENT: 10A IR 1.1 500 D10SB Dimensions in inches and (millimeters) TECHNICAL SPECIFICATION