D1050N18TXPSA1 ISC | Alldatasheet
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Technical content
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FEATURES
- Lowforwardvoltage drop
- High reversevoltage
- Hermetic metalcases with ceramicinsulators
APPLICATIONS
- All purpose high powerrectifierdiodes
- High powerresistanceweldingequipment
- Non-controllable andhalf-controllablerectifiers
- Controlledrectifiers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM RecurrentPeakReverseVoltage 1600 V IFAV ContinuousForwardCurrent TC=85°C 1050 A IFSM Non-RepetitivePeakForward SurgeCurrent tp =10ms,HalfSineWave 24 KA TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase At180°sine,doublesidecooledClampingforce18KN 0.03 ℃/W ELECTRICALCHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF DiodeForwardVoltage IF=3KA;F=18KN;TJ=150℃ -- 3.5 V IR ReverseCurrent VR=VRRM;TJ=150℃ -- 60 mA
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