IDT02S60C INFINEON | Alldatasheet

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Technical content

Features

  • Revolutionary semiconductor material - Silicon Carbide
  • No reverse recovery/ no forward recovery
  • Temperature independent switching behavior
  • High surge current capability
  • Qualified according to JEDEC 1) for target applications
  • Breakdown voltage tested at 5mA2)
  • Optimized for high temperature operation thinQ! 2G Diode specially designed for fast switching applications like:
  • CCM PFC Maximum ratings Parameter Symbol Conditions Unit Continuous forward current I F T C<120 °C 2A T C<70 °C 3 RMS forward current I F,RMS f =50 Hz 2.8 I F,SM T C=25 °C, t p=10 ms 11.5 T C=150°C, t p=10 ms 9.7 Repetitive peak forward current I F,RM T j=150 °C, Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs 100 i ²t value ∫i 2dt T C=25 °C, t p=10 ms 0.61 A2s T C=150°C, t p=10 ms 0.44 Repetitive peak reverse voltage V RRM T j=25 °C 600 V Diode dv/dt ruggedness d v/ dt V R = 0….480V 50 V/ns Power dissipation P tot T C=25 °C 18 W Operating and storage temperature T j, T stg -55 ... 175 °C Mounting torque M3 and M3.5 screws 60 Mcm Value Surge non-repetitive forward current, sine halfwave V DC 600 V Q c 3.2 nC I F 2 A Product Summary PG-TO220-2-2 Type Package Marking Pin 1 Pin 2 IDT02S60C PG-TO220-2-2 D02S60C C A Rev. 2.0 page 1 2007-04-25

Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thJC - - 8.5 K/W Thermal resistance, junction - ambient R thJA leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6mm (0.063 in.) from case for 10s - - 260 °C

Electrical characteristics

DC blocking voltage V DC I R=0.05mA, T j=25°C 600 - - V Diode forward voltage V F I F=2 A, T j=25 °C - 1.7 1.9 I F=2 A, T j=150 °C - 2.1 2.6 I F=3 A, T j=25 °C - 2.1 2.4 I F=3 A, T j=150 °C - 2.8 3.7 Reverse current I R V R=600 V, T j=25 °C - 0.23 15 µA V R=600 V, T j=150 °C - 1 150 AC characteristics Total capacitive charge Q c - 3.2 - nC Switching time3) t c - - <10 ns C V R=1 V, f = MHz -6 0- p F V R=300 V, f =1 MHz -8- V R=600 V, f =1 MHz -8- Values V R=400 V,I F≤I F,max, di F/dt =200 A/µs, T j=150 °C 1) J-STD20 and JESD22 4) Only capacitive charge occuring, guaranteed by design. 2) All devices tested under avalanche condition, for a time periode of 5ms, at 5mA. 3) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. Rev. 2.0 page 2 2007-04-25

1 Power dissipation 2 Diode forward current

P tot=f(T C) I F=f(T C); T j≤175 °C parameter: RthJC(max) parameter: D=t P /T 3 Typ. forward characteristic 4 Typ. forward characteristic in surge current I F=f(V F); t p=400 µs mode parameter: T j I F=f(V F); t p=400 µs; parameter: Tj 25 75 125 175 T C [°C] P tot [W] 0.7 0.5 0.3 0.1 25 75 125 175 T C [°C] I F [A] -55ºC 25ºC 100ºC 150ºC 175ºC 01234 V F[V] I F [A] IF -55ºC 25ºC 100ºC 150ºC 175ºC 02468 V F[V] I F [A] IF Rev. 2.0 page 3 2007-04-25

5 Typ. capacitance charge vs. current slope 6 Typ. reverse current vs. reverse voltage Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max I R=f(V R) parameter: T j 7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage Z thJC=f(t p) C =f(V R); T C=25 °C, f =1 MHz parameter: D =t p/T 103102101100 V R [V] C [pF] 0.02 0.05 0.1 0.2 0.5 10-110-210-310-410-5 101 100 10-1 10-2 t P [s] Z thJC [K/W] 25 °C 100 °C 150 °C 175 °C -55 °C 10-5 10-6 10-7 10-8 10-9 10-10 100 200 300 400 500 600 V R [V] I R [µA] 100 400 700 1000 di F/d t [A/µs] Q C [nC] Rev. 2.0 page 4 2007-04-25

9 Typ. C stored energy E C=f(V R) 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 0 100 200 300 400 500 600 V R [V] E c [µC] Rev. 2.0 page 5 2007-04-25

Rev. 2.0 page 6 2007-04-25

81726 München, Germany

© Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 7 2007-04-25