SCV8163 ONSEMI | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Features
- Operating Input V oltage Range: 2.2 V to 5.5 V
- Available in Fixed V oltage Option: 1.2 V to 5.3 V
- ±2% Accuracy Over Load/Temperature
- Ultra Low Quiescent Current Typ. 12 /C0109A
- Standby Current: Typ. 0.1 /C0109A
- Very Low Dropout: 80 mV at 250 mA @ 3.3 V
- Ultra High PSRR: Typ. 92 dB at 20 mA, f = 1 kHz
- Ultra Low Noise: 6.5 /C0109VRMS
- Stable with a 1 /C0109F Small Case Size Ceramic Capacitors
- Available in XDFN4 1 mm x 1 mm x 0.4 mm Package
- NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; Grade 1 AEC−Q100 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications
- ADAS, Infotainment & Cluster, and Telematics
- General Purpose Automotive & Industrial
- Building & Factory Automation, Smart Meters IN EN GND OUT OFF ON
Figure 1. Typical Application Schematics
ORDERING INFORMATION
(Top View) XDFN4 CASE 711AJ XX M XX = Specific Device Code M = Date Code
Figure 2. Simplified Schematic Block Diagram
4 IN Input voltage supply pin
1 OUT Regulated output voltage. The output should be bypassed with small 1 /C0109F ceramic capacitor. 3 EN Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1.0 V enables the LDO.
2 GND Common ground connection
− N/C Not connected. This pin can be tied to ground to improve thermal dissipation. EP EPAD Exposed Pad. Exposed pad can be tied to ground plane for better power dissipation. should not be assumed, damage may occur and reliability may be affected.
- Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
- This device series incorporates ESD protection and is tested by the following methods:
Latchup Current Maximum Rating tested per JEDEC standard: JESD78. the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Characteristics, XDFN4 (Note 3), Thermal Resistance, Junction−to−Air R/C0113JA 198.1 °C/W 3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51 −7 ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 /C0109F, unless otherwise noted. VEN = 1.0 V. Typical values are at TJ = +25°C (Note 4). Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage VIN 2.2 5.5 V Output Voltage Accuracy VIN = (VOUT(NOM) + 1 V) to 5.5 V VOUT −2 +2 % VIN = (VOUT(NOM) + 1 V) to 5.5 V (for VOUT < 1.8 V) VOUT −3 +3 % Line Regulation VOUT(NOM) + 1 V ≤ VIN ≤ 5.5 V LineReg 0.02 %/V Load Regulation IOUT = 1 mA to 250 mA LoadReg 0.001 0.005 %/mA Dropout Voltage (Note 5) IOUT = 250 mA VOUT(NOM) = 1.8 V VDO 180 250 mV VOUT(NOM) = 2.8 V 95 160 VOUT(NOM) = 3.0 V 90 155 VOUT(NOM) = 3.3 V 80 145 Output Current Limit VOUT = 90% VOUT(NOM) ICL 250 700 mA Short Circuit Current VOUT = 0 V ISC 690 Quiescent Current IOUT = 0 mA IQ 12 20 /C0109A Shutdown Current VEN ≤ 0.4 V, VIN = 4.8 V IDIS 0.01 1 /C0109A EN Pin Threshold Voltage EN Input Voltage “H” VENH 1.0 V EN Input Voltage “L” VENL 0.4 EN Pull Down Current VEN = 4.8 V IEN 0.2 0.5 /C0109A Turn−On Time COUT = 1 /C0109F, From assertion of VEN to VOUT = 95% VOUT(NOM) 120 /C0109s Power Supply Rejection Ratio IOUT = 20 mA f = 100 Hz f = 1 kHz f = 10 kHz f = 100 kHz PSRR 91 dB Output Voltage Noise f = 10 Hz to 100 kHz IOUT = 1 mA IOUT = 250 mA VN 8.0 6.5 /C0109VRMS Thermal Shutdown Threshold Temperature rising TSDH 160 °C Temperature falling TSDL 140 °C Active Output Discharge Resistance VEN < 0.4 V, Version A only RDIS 280 /C0087 Line Transient (Note 6) VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) + 1.6 V) in 30 /C0109s, IOUT = 1 mA TranLINE −1 mV VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) + 1 V) in 30 /C0109s, IOUT = 1 mA Load Transient (Note 6) IOUT = 1 mA to 200 mA in 10 /C0109s TranLOAD −40 mV IOUT = 200 mA to 1 mA in 10 /C0109s +40 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T A = 25°C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 5. Dropout voltage is characterized when V OUT falls 100 mV below VOUT(NOM). 6. Guaranteed by design.
Figure 27. Output Voltage Noise Spectral Density – VOUT = 1.8 V
10 Hz − 100 kHz
100 Hz − 100 kHz
Figure 28. Output Voltage Noise Spectral Density – VOUT = 2.8 V Figure 29. Power Supply Rejection Ratio − Figure 30. Power Supply Rejection Ratio −
Figure 31. Power Supply Rejection Ratio − Figure 32. Enable Turn−on Response − Figure 33. Enable Turn−on Response −
1 V/div
Figure 34. Enable Turn−on Response − Figure 35. Enable Turn−on Response −
Figure 42. Load Transient Response − Figure 43. Load Transient Response − Figure 44. Overheating Protection − TSD Figure 45. Turn −on/off − Slow Rising VIN Figure 46. Enable Turn−off − Various Output
AC signals or noise modulated onto constant input voltage. during sudden load current changes. applied DC bias. Please refer Figure 47. Figure 47. Capacity vs DC Bias Voltage temperature, increasing at low temperature. and to deactivate/activate the active discharge function. the active discharge transistor is turned−off. limitation for the short circuit duration. used as a substitute for proper heat sinking.
Figure 48. /C0113JA and PD (MAX) vs. Copper Area
www.onsemi.com Reverse Current The PMOS pass transistor has an inherent body diode which will be forward biased in the case that VOUT > VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. Power Supply Rejection Ratio The SCV8163 features very high Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range 100 kHz – 10 MHz can be tuned by the selection of C OUT capacitor and proper PCB layout. Turn−On Time The turn−on time is defined as the time period from EN assertion to the point in which VOUT will reach 98% of its nominal value. This time is dependent on various application conditions such as V OUT(NOM), COUT, TA. PCB Layout Recommendations To obtain good transient performance and good regulation characteristics place CIN and COUT capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 or 0201 capacitors with appropriate capacity. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad can be tied to the GND pin for improvement power dissipation and lower device temperature. Option Marking Description Package Shipping† SCV8163AMX280TBG 2.8 V NN 250 mA, Active Discharge XDFN4 (Pb-Free) 3000 or 5000 / Tape & Reel (Note 7) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 7. Product processed after October 1, 2022 are shipped with quantity 5000 units / tape & reel.
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