CXTA62 CENTRAL | Alldatasheet
Document overview
- Manufacturer or author: Central Semiconductor Corp.
- PDF pages: 2
Technical content
DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA62 is a PNP Silicon Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 20 V Collector-Emitter Voltage V CES 20 V Emitter-Base Voltage V EBO 10 V Continuous Collector Current I C 500 mA Power Dissipation P D 1.2 W Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO V CB=15V 100 nA IEBO V EB=10V 100 nA BVCES I C=100µA 20 V BVCBO I C=100µA 20 V VCE(SAT) I C=10mA, IB=10µA 1.0 V VBE(ON) V CE=5.0V, IC=10mA 1.4 V hFE V CE=5.0V, IC=10mA 20K R3 (23-February 2010) www.centralsemi.com
SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER (Bottom View) www.centralsemi.com R3 (23-February 2010)