CXTA44-HF_15 KEXIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Low Collector-Emitter Saturation Voltage
  • High Breakdown Voltage 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 200 mA Collector Current - Pulse ICP 300 mA Collector Power Dissipation PC 500 mW Thermal Resistance from Junction to Ambient RθJA 250 ℃/W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 400 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 400 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 400 V , IE= 0 100 Emitter cut-off current IEBO VEB= 4V , IC=0 100 IC=1 mA, IB=0.1mA 0.4 IC=10 mA, IB=1mA 0.5 IC=50 mA, IB=5mA 0.75 Base - emitter saturation voltage VBE(sat) IC=10 mA, IB=1mA (Note.1) 0.75 VCE= 10V, IC= 1mA 40 VCE= 10V, IC= 10mA 50 200 VCE= 10V, IC= 50mA 45 VCE= 10V, IC= 100mA 40 Collector intput capacitance Cib VBE=0.5V, IC=0, f=1MHz 7 Collector output capacitance Cob VCB= 20V, IE=0, f=1MHz 130 pF V V nA Collector-emitter saturation voltage (Note.1) VCE(sat) DC current gain (Note.1) hFE ■ Marking Marking A44 F Note.1: Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. NPN Transistors CXTA44-HF (KXTA44-HF)
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 200 400 600 800 1000 100 150 200 250 300 0111.0 100 1000 001011 100 1000 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 001011 200 400 600 800 1000 001011 100 150 200 250 0 5 10 15 20 25 VCE=10V Ta=25℃ Ta=100 o C BASE-EMITTER VOLTAGE VBE(mV) COLLECTOR CURRENT IC (mA) IC — — VBE f=1MHz IE=0 / IC=0 Ta=25 o C REVERSE VOLTAGE V (V) CAPACITANCE C (pF) VCB / VEBCob / Cib — — Cib Cob VCE= 10V Ta=100 o C Ta=25 o C COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE — — 300 COLLECTOR POWER DISSIPATION Pc (W) AMBIENT TEMPERATURE Ta ( )℃ Pc — — Ta 300 COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ Ta=100℃ β=10 ICVBEsat — — 300 Ta=25℃ Ta=100℃ β=10 VCEsat — — IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) 200uA 180uA 160uA 140uA COMMON EMITTER Ta=25℃ 80uA 120uA 100uA 60uA 40uA IB=20uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) Static Characteristic NPN Transistors CXTA44-HF (KXTA44-HF)