CXT853 CENTRAL | Alldatasheet
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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 200 V Collector-Emitter Voltage V CEO 100 V Emitter-Base Voltage V EBO 6.0 V Collector Current I C 6.0 A Power Dissipation P D 1.2 W Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=150V 10 nA ICBO VCB=150V, TA=100°C 1.0 μA ICER VCE=150V, RBE ≤ 1kΩ 10 nA IEBO VEB=6.0V 10 nA BVCBO IC=100μA 200 220 V BVCER IC=10mA, RBE ≤ 1kΩ 200 210 V BVCEO IC=10mA 100 110 V BVEBO IE=100μA 6.0 8.0 V VCE(SAT) IC=100mA, IB=5mA 22 50 mV VCE(SAT) IC=2.0A, IB=100mA 135 170 mV VCE(SAT) IC=5.0A, IB=500mA 340 mV VBE(SAT) IC=5.0A, IB=500mA 1.25 V CXT853 SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR SOT-89 CASE Central Semiconductor Corp. TM R0 (1-February 2006) DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT853 type is a high current, high voltage silicon NPN transistor. Packaged in the SOT-89 surface mount case, the CXT853 is ideal for industrial and consumer applications requiring high energy efficiency in a small package. MARKING CODE: FULL PART NUMBER PNP complement: CXT953 PRELIMINARY FEATURES:
- Low Saturation Voltage: VCE(SAT) = 0.340V Max @ IC = 5.0A APPLICATIONS:
- Power Management • Motor Driving
- DC/DC Converters • Switching
Semiconductor Corp. TM SOT-89 CASE - MECHANICAL OUTLINE CXT853 SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR R0 (1-February 2006) LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE: CXT853 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS hFE VCE=2.0V, IC=10mA 100 hFE VCE=2.0V, IC=2.0A 100 200 300 hFE VCE=2.0V, IC=4.0A 50 100 hFE VCE=2.0V, IC=10A 20 30 fT VCE=10V, IC=100mA, f=50MHz 190 MHz Cob VCB=10V, IE=0, f=1.0MHz 38 pF