CXT591E CENTRAL | Alldatasheet
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PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT591E type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 60 V Emitter-Base Voltage V EBO 5.0 V Continuous Collector Current I C 1.0 A Continuous Base Current I B 200 mA Peak Collector Current I CM 2.0 A Power Dissipation P D 1.2 W Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO V CB=60V 100 nA IEBO V EB=4.0V 100 nA BVCBO I C=100µA 80 V BVCEO I C=10mA 60 V BVEBO I E=100µA 5.0 V VCE(SAT) I C=500mA, IB=50mA 0.20 V VCE(SAT) I C=1.0A, IB=100mA 0.40 V VBE(SAT) I C=1.0A, IB=100mA 1.1 V VBE(ON) V CE=5.0V, IC=1.0A 1.0 V hFE V CE=5.0V, IC=1.0mA 200 hFE V CE=5.0V, IC=500mA 200 600 hFE V CE=5.0V, IC=1.0A 50 hFE V CE=5.0V, IC=2.0A 15 fT V CE=10V, IC=50mA, f=100MHz 150 MHz Cob V CB=10V, IE=0, f=1.0MHz 10 pF R1 (23-February 2010) www.centralsemi.com
SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER (Bottom View) www.centralsemi.com R1 (23-February 2010)