CXT5551HC_15 CENTRAL | Alldatasheet
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Technical content
DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 180 V Collector-Emitter Voltage V CEO 160 V Emitter-Base Voltage V EBO 6.0 V Continuous Collector Current I C 1.0 A Power Dissipation P D 1.2 W Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO V CB=120V 50 nA ICBO V CB=120V, TA=100°C 50 µA IEBO V EB=4.0V 50 nA BVCBO I C=100µA 180 V BVCEO I C=1.0mA 160 V BVEBO I E=10µA 6.0 V VCE(SAT) I C=10mA, IB=1.0mA 0.15 V VCE(SAT) I C=50mA, IB=5.0mA 0.20 V VBE(SAT) I C=10mA, IB=1.0mA 1.00 V VBE(SAT) I C=50mA, IB=5.0mA 1.00 V hFE V CE=5.0V, IC=1.0mA 80 h FE V CE=5.0V, IC=10mA 80 250 hFE V CE=5.0V, IC=50mA 30 hFE V CE=10V, IC=1.0A 10 fT V CE=10V, IC=10mA, f=100MHz 100 MHz Cob V CB=10V, IE=0, f=1.0MHz 15 pF SOT-89 CASE R1 (23-February 2010) www.centralsemi.com
SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER (Bottom View) www.centralsemi.com R1 (23-February 2010)