CXT5551E CENTRAL | Alldatasheet

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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 250 V Collector-Emitter Voltage V CEO 220 V Emitter-Base Voltage V EBO 6.0 V Collector Current I C 600 mA Power Dissipation P D 1.2 W Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=120V 50 nA ICBO VCB=120V, TA=100°C 50 μA IEBO VEB=4.0V 50 nA BVCBO IC=100μμA 250 V BVCEO IC=1.0mA 220 V BVEBO IE=10μA 6.0 V VCE(SAT) IC=10mA, IB=1.0mA 75 mV VCE(SAT) IC=50mA, IB=5.0mA 100 mV VBE(SAT) IC=10mA, IB=1.0mA 1.00 V VBE(SAT) IC=50mA, IB=5.0mA 1.00 V CXT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE Central Semiconductor Corp. TM R0 (10-May 2006) DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. FEATURES:

  • High Collector Breakdown Voltage 250V
  • Low Leakage Current 50nA Max
  • Low Saturation Voltage 100mV Max @ 50mA
  • Complementary Device CXT5401E
  • SOT-89 Surface Mount Package APPLICATIONS:
  • General purpose switching and amplification
  • Telephone applications MARKING CODE: FULL PART NUMBER ♦Enhanced Specification

Semiconductor Corp. TM SOT-89 CASE - MECHANICAL OUTLINE CXT5551E ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR R0 (10-May 2006) LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE: FULL PART NUMBER ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS hFE VCE=5.0V, IC=1.0mA 120 hFE VCE=5.0V, IC=10mA 120 300 hFE VCE=5.0V, IC=50mA 75 hFE VCE=10V, IC=150mA 25 fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz Cob VCB=10V, IE=0, f=1.0MHz 6.0 pF Cib VEB=0.5V, IC=0, f=1.0MHz 20 pF hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 200 NF V CE=5.0V, IC=200μA, RS=10Ω f=10Hz to 15.7kHz 8.0 dB ♦Enhanced Specification