CXT5551

CXT5551_15 KEXIN | Alldatasheet

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Features

High current (max. 600mA). Low voltage (max. 160 V). Electrical Characteristics Ta = 25 Absolute Maximum Ratings Ta = 25 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Marking Marking 5551

• Comlementary to CXT5401 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 180 Collector- emitter breakdown voltage VCEO Ic=1 mA， IB= 0 160 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 6 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 50 Emitter cut-off current IEBO VEB= 5V , IC=0 50 IC=10 mA, IB=1mA 0.15 IC=50 mA, IB=5mA 0.2 IC=10 mA, IB=1mA 1 IC=50 mA, IB=5mA VCE= 5V, IC= 1mA 80 VCE= 5V, IC= 10mA 80 300 VCE= 5V, IC= 50mA 30 Noise figure NF VCE=5V,Ic=0.2mA, f=10Hzto15.7KHZ,Rs=10Ω 8 dB Collector output capacitance Cob VCB= 10V, IE=0,f=1MHz 6 pF Transition frequency fT VCE= 10V, IC= 10mA,f=100MHz 100 MHz Base - emitter saturation voltage VBE(sat) DC current gain hFE V nA V Collector-emitter saturation voltage VCE(sat)

www.kexin.com.cn2 Transistors NPN Transistors CXT5551 (KXT5551) ■ Typical Characterisitics 0 2 4 6 8 10 12 14 16 18 011 001011 100 200 300 011 100 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0010111.0 100 1000 0010111.0 200 400 600 800 1000 COMMON EMITTER Ta=25℃ IB=20uA COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) Static Characteristic 200uA 180uA 160uA 140uA 120uA 100uA 80uA 60uA 40uA TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) ICfT — — VCE=10V Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) Ta=25℃ Ta=100℃ IChFE — — VCE= 5V 0.3 500 Cob Cib f=1MHz IE=0 / IC=0 Ta=25℃ REVERSE VOLTAGE V (V) CAPACITANCE C (pF) VCB / VEBCob / Cib — — AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION PC (W) Pc —— Ta 0.5 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ Ta=100℃ β=10 VCEsat —— IC 300 100 200 Ta=25℃ Ta=100℃ β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC (mA) ICVBEsat — — 300