CXT5551 CENTRAL | Alldatasheet
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MAXIMUM RATINGS (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 180 V Collector-Emitter Voltage V CEO 160 V Emitter-Base Voltage V EBO 6.0 V Collector Current I C 600 mA Power Dissipation P D 1.2 W Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance Θ JA 104 °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=120V 50 nA ICBO VCB=120V, TA=100°C 50 µA IEBO VEB=4.0V 50 nA BVCBO IC=100µA 180 V BVCEO IC=1.0mA 160 V BVEBO IE=10µA 6.0 V VCE(SAT) IC=10mA, IB=1.0mA 0.15 V VCE(SAT) IC=50mA, IB=5.0mA 0.20 V VBE(SAT) IC=10mA, IB=1.0mA 1.00 V VBE(SAT) IC=50mA, IB=5.0mA 1.00 V hFE VCE=5.0V, IC=1.0mA 80 hFE VCE=5.0V, IC=10mA 80 250 hFE VCE=5.0V, IC=50mA 30 fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz Cob VCB=10V, IE=0, f=1.0MHz 6.0 pF hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 200 NF V CE=5.0V, IC=200µA, RS=10Ω f=10Hz to 15.7kHz 8.0 dB CXT5551 SURFACE MOUNT NPN SILICON TRANSISTORS SOT-89 CASE Central Semiconductor Corp. TM R3 ( 20-December 2001) DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
A C E G F H J K M L B 1 32 Central Semiconductor Corp. TM SOT-89 CASE - MECHANICAL OUTLINE CXT5551 SURFACE MOUNT NPN SILICON TRANSISTORS R3 ( 20-December 2001) LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE BOTTOM VIEW