CXT5401E CENTRAL | Alldatasheet
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Technical content
Semiconductor Corp. TM R0 (10-May 2006) DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. FEATURES:
- High Collector Breakdown Voltage 250V
- Low Leakage Current 50nA Max
- Low Saturation Voltage 150mV Max @ 50mA
- Complementary Device CXT5551E
- SOT-89 Surface Mount Package APPLICATIONS:
- General purpose switching and amplification
- Telephone applications MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 250 V Collector-Emitter Voltage V CEO 220 V Emitter-Base Voltage V EBO 7.0 V Collector Current I C 600 mA Power Dissipation P D 1.2 W Operating and Storage Junction Temperature T J,Tstg -65 to +150 °C Thermal Resistance ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=120V 50 nA ICBO VCB=120V, TA=100°C 50 μA IEBO VEB=3.0V 50 nA BVCBO IC=100μμA 250 V BVCEO IC=1.0mA 220 V BVEBO IE=10μμA 7.0 V VCE(SAT) IC=10mA, IB=1.0mA 100 mV VCE(SAT) IC=50mA, IB=5.0mA 150 mV VBE(SAT) IC=10mA, IB=1.0mA 1.00 V VBE(SAT) IC=50mA, IB =5.0mA 1.00 V ♦Enhanced Specification
Semiconductor Corp. TM SOT-89 CASE - MECHANICAL OUTLINE CXT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR R0 (10-May 2006) LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE: FULL PART NUMBER ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS hFE VCE=5.0V, IC=1.0mA 100 hFE VCE=5.0V, IC=10mA 100 300 hFE VCE=5.0V, IC=50mA 75 hFE VCE=10V, IC=150mA 25 fT VCE=10V, IC=10mA, f=100MHz 100 300 MHz Cob VCB=10V, IE=0, f=1.0MHz 6.0 pF hfe VCE=10V, IC=1.0mA, f=1.0kHz 40 200 NF V CE=5.0V, IC=200μA, RS=10Ω f=10Hz to 15.7kHz 8.0 dB ♦Enhanced Specification