CXT5401 DGNJDZ | Alldatasheet
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STOR (PNP) FEATURE z S witching and amplification in high voltage Applications such as telephony z Lo w current(max. 500mA) z High volt age(max.160v) 0$5.,1* 5401 Symbol Para meter Value Unit VCBO Coll ector-Base Voltage -160 V VCE O Coll ector-Emitter Voltage -150 V VEB O Emitter-Base V oltage -5 V IC Coll ector Current -Continuous -0.5 A PC Coll ector Power Dissipation 0.5 W ℃TJ,Tstg Operation Junction and Storage Temperature Range -55~15 ELECTRICAL CHARACTERISTICS(T a=25℃ unless otherwise specified) Pa rameter Symbol Test conditions Min T yp Max Unit Co llector-base breakdown voltage V(B R)CBO IC= -100μA, IE=0 -160 V Co llector-emitter breakdown voltage V(B R)CEO IC = -1mA, IB= 0 -150 V Emitter-b ase breakdown voltage V( BR)EBO IE = -10μA, IC=0 -5 V Co llector cut-off current ICB O V CB -120 V, IE= 0 -50 nA Emitter cut-off current IEBO V EB= -3 V, IC= 0 -50 nA hFE(1) V CE= -5 V, IC= -1 mA 50 hFE(2) V CE= -5 V, IC= -10 mA 100 300 DC c urrent gain hFE(3) V CE= -5 V, IC= -50 mA 50 VCE (sat) I C= -10 mA, IB= -1 mA -0.2 V Co llector-emitter saturation voltage VCE (sat) I C= -50 mA, IB= -5 mA -0.5 V VBE( sat) I C= -10 mA, IB= -1 mA -1 V Base- emitter saturation voltage VBE( sat) I C= -50 mA, IB= -5 mA -1 V T ransition frequency f T VCE= -10V, IC= -10mA, f = 100MHz 100 300 MHz Ou tput Capacitance Cob V CB= -10V, IE= 0,f=1MHz 6 pF Nois e Figure NF VCE= -5.0V , IC= -200μA, RS= 1 0Ω,f =10Hz to15.7kHz 8 dB SOT -89-3L 1. BASE 2. COL LECTOR 3. EMITTER RθJA T hermal Resistance From Junction To Ambient 250 ℃/W MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 5401 SO T-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., Dongguan Nanjing Electronics Ltd. 1/4 www.dgnjdz.com
0.0 0.1 0.2 0.3 0.4 0.5 0.6 02468 1 0 1 2 1 4 1 6 1 8 -0.1 -1 -1 0 -100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.1 -1 -1 0 -100-0.01 -0.1 -0 -5 -10 -1 5 -20 -25 -30 100 150 200 250 300 f=1MHz IE=0 / IC=0 Ta=25 o C VCB / VEB Cob / Cib —— REVERSE VOLT AGE V (V) CAPACITANCE C ( pF) Cob Cib 0.5 10 VCE= -5V Ta=25 o C Ta=100 o C COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE —— 500 0.3 500 AMBIENT TEMPERATURE Ta ( )℃ COLLECT OR POWER DISSIPATION Pc (W) Pc —— Ta CO MMON EMITTER Ta=25℃ -200uA -180uA -160uA -140uA -120uA -100uA -80uA -60uA -40uA IB=-20uA COLLECTOR-EM ITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) St atic Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLT AGE VCEs at (V) BASE-EMIT TER SATURATION VOLTAGE VBEsa t (V) COLLECTOR CURRENT IC (mA) β=10 Ta=100℃ Ta=25℃ ICVBE sat —— --- Ta=25℃ Ta=100℃ β=10 VCE sat —— IC TRANS ITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=-10V Ta=25 o C ICfT —— Ty pical Characteristics Dongguan Nanjing Electronics Ltd. 2/4 www.dgnjdz.com
A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. Dongguan Nanjing Electronics Ltd. 3/4 www.dgnjdz.com
Dongguan Nanjing Electronics Ltd. 4/4 www.dgnjdz.com