CXT5401_15 KEXIN | Alldatasheet
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www.kexin.com.cn 1 Transistors PNP Transistors CXT5401 (KXT5401) ■ Features
- Switching and amplification in high voltage Applications such as telephony
- Low current(max. 500mA)
- High voltage(max.160v)
- Comlementary to CXT5551 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -150 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 0.5 W Thermal Resistance Junction to Ambient RθJA 250 ℃/W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -160 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -150 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -120 V , IE=0 -50 Emitter cut-off current IEBO VEB= -4V , IC=0 -50 IC=-10 mA, IB=- 1mA -0.2 IC=-50 mA, IB= -5mA -0.5 IC= -10 mA, IB= -1mA -1 IC= -50 mA, IB= -5mA -1 hfe（1） VCE= -5V, IC= -1mA 50 hfe（2） VCE= -5V, IC= -10mA 60 300 hfe（3） VCE= -5V, IC=-50mA 50 Noise Figure NF VCE= -5.0V, IC= -200μA, RS= 10Ω,f =10Hz to 15.7KHz 8 Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz 6 Transition frequency fT VCE= -10V, IC= -10mA,f=100MHz 100 300 MHz DC current gain VCE(sat) Collector-emitter saturation voltage Base - emitter saturation voltage VBE(sat) pF V V nA ■ Marking Marking 5401 dB
www.kexin.com.cn2 Transistors PNP Transistors CXT5401 (KXT5401) ■ Typical Characterisitics 1 10 100 100 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 12 14 16 18 -0.1 -1 -10 -100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.1 100 150 200 250 300 f=1MHz IE=0 / IC=0 Ta=25 o C VCB / VEB Cob / Cib — — REVERSE VOLTAGE V (V) CAPACITANCE C (pF) Cob Cib 0.5 10 VCE= -5V Ta=25 o C Ta=100 o C COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE — — 500 0.3 500 AMBIENT TEMPERATURE Ta ( )℃ COLLECTOR POWER DISSIPATION Pc (W) Pc —— Ta COMMON EMITTER Ta=25℃ -200uA -180uA -160uA -140uA -120uA -100uA -80uA -60uA -40uA IB=-20uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) Static Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR CURRENT IC (mA) β=10 Ta=100℃ Ta=25℃ ICVBEsat — — --- Ta=25℃ Ta=100℃ β=10 VCEsat —— IC TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=-10V Ta=25 o C ICfT — —