CXT5401 YFWDIODE | Alldatasheet
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High current (max. 500mA). Low voltage (max. 150 V). Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V CBO I C =-100 A -160 V Collector to emitter breakdown voltage V CEO I C =-1.0mA -150 V Emitter to base breakdown voltage V EBO I E =-10 A -5.0 V V CB =- 120 V, I E =0 - 5 0 n A V CB =- 120 V, T A =100 -50 A I C =- 1 . 0m A ;V CE = -5.0 V 50 I C = -10mA; V CE =- 5.0V 60 240 I C =- 5 0m A ;V CE = -5.0V 50 I C =- 10 mA; I B = -1.0mA -0.2 V I C =- 5 0m A ;I B = -5.0mA -0.5 V I C =- 1 0m A ;I B = -1.0mA -1.0 V I C =- 5 0m A ;I B =- 5.0mA -1.0 V Output capacitance C ob V CB =-10 V, I E = 0,f=1.0MHz 6.0 pF Transition frequency f T I C =- 1 0m A ;V CE =-10V; f = 100 MHz 100 300 MHz I CBO Collector cutoff current V CE(sat) Collector to emitter saturation voltage Base to emitter saturation voltage V BE(sat) h FE DC current gain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -160 V Collector-emitter voltage V CEO -150 V Emitter-base voltage V EBO -5 V Collector current (DC) I C -500 mA power dissipation P D 1.2 W thermal resistance Junction- to-ambient R JA 104 Junction temperature T j 150 Storage temperature T stg - 6 5t o+ 1 5 0 Simplified outline(SOT-89) 1.Base 2.Collector 3.Emitter Surface Mount PNP Silicon Transistor
2 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. ■ Typical Characterisitics 1 10 100 100 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 12 14 16 18 -0.1 -1 -10 -100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -0.1 100 150 200 250 300 f=1MHz I E =0 / I C T a =25 o C V CB / V EB C ob / C ib — — REVERSE VOLTAGE V (V) CAPACITANCE C (pF) C ob C ib 0.5 10 V CE = -5V T a =25 o C T a =100 o C COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE I C h FE — — 500 0.3 500 AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P c (W) P c —— T a COMMON EMITTER T a =25 -200uA -180uA -160uA -140uA -120uA -100uA -80uA -60uA -40uA I B =-20uA COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) β=10 T a =100 T a =25 I C V BEsat — — --- T a =25 T a =100 β=10 V CEsat —— I C TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) V CE =-10V T a =25 o C I C f T — —
3 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Package Outline SOT-89 Summary of Packing Options Package Package Description Packing Quantity Industry Standard SOT-89 Tape/Reel,7”reel 1000 EIA-481-1 DIMENSIONS (mm are the original dimensions) w M e E HE B B 0 2 4 mm scale bp3 bp2 bp1 c D Lp A 1 2 3 UNIT A mm 1.6 1.4 0.48 0.35 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 HE Lp 4.25 3.75 e 3.0 w 0.13 1.5 1.2 0.8 bp2bp1 0.53 0.40 bp3 1.8 1.4