CXT2907A_10 CENTRAL | Alldatasheet
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PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 60 V Emitter-Base Voltage V EBO 5.0 V Continuous Collector Current I C 600 mA Power Dissipation P D 1.2 W Operating and Storage Junction Temperature T J, Tstg -65 to +150 °C Thermal Resistance ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO V CB=50V 10 nA ICBO V CB=50V, TA=125°C 10 µA ICEV V CE=30V, VBE=0.5V 50 nA BVCBO I C=10µA 60 V BVCEO I C=10mA 60 V BVEBO I E=10µA 5.0 V VCE(SAT) I C=150mA, IB=15mA 0.4 V VCE(SAT) I C=500mA, IB=50mA 1.6 V VBE(SAT) I C=150mA, IB=15mA 1.3 V VBE(SAT) I C=500mA, IB =50mA 2.6 V hFE V CE=10V, IC=0.1mA 75 hFE V CE=10V, IC=1.0mA 100 hFE V CE=10V, IC=10mA 100 hFE V CE=10V, IC=150mA 100 300 R7 (23-February 2010) www.centralsemi.com
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS hFE V CE=10V, IC=500mA 50 fT V CE=20V, IC=50mA, f=100MHz 200 MHz Cob V CB=10V, IE=0, f=1.0MHz 8.0 pF Cib V BE=2.0V, IC=0, f=1.0MHz 30 pF ton V CC=30V, VBE=0.5, IC=150mA, IB1=15mA 45 ns td V CC=30V, VBE=0.5, IC=150mA, IB1=15mA 10 ns tr V CC=30V, VBE=0.5, IC=150mA, IB1=15mA 40 ns toff V CC=6.0V, IC=150mA, IB1=IB2=15mA 100 ns ts V CC=6.0V, IC=150mA, IB1=IB2=15mA 80 ns tf V CC=6.0V, IC=150mA, IB1=IB2=15mA 30 ns SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER (Bottom View) www.centralsemi.com R7 (23-February 2010)