CTN635 CDIL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Continental Device India Limited Data Sheet Page 1 of 4 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier. CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 1 = COLLECTOR 2 = BASE 3 = EMITTER ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS RatingsRatingsRatingsRatingsRatings SymbolSymbolSymbolSymbolSymbol CTN635 CTN635CTN635 CTN635CTN635 CTN637 CTN637CTN637 CTN637CTN637 CTN639 CTN639CTN639 CTN639CTN639 UnitsUnitsUnitsUnitsUnits CTN636 CTN636CTN636 CTN636CTN636 CTN638 CTN638CTN638 CTN638CTN638 CTN640 CTN640CTN640 CTN640CTN640 Collector-Base Voltage V CBO 45 60 100 V Collector-Emitter Voltage V CEO 45 60 80 V Emitter-Base Voltage V EBO 5- V Collector Current – Continuous I C -1 - A Peak I CM - 1.5 - A Base Current – Continuous I B - 100 - mA Peak I BM - 200 - mA Power Dissipation @ Ta=25ºC P D - 750 - mW Derate above 25°C - 6 - mW/°C Power Dissipation @ Tc=25ºC P D - 2.5 - W Derate above 25°C - 20 - mW/°C Operating And Storage Junction T j,Tstg –55 to +150 ºC Temperature Range 1 2 3 E B C TO-237 Plastic Package Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company

Continental Device India Limited Data Sheet Page 2 of 4 ELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICSELECTRICAL CHARACTERISTICS (Ta =25ºC unless otherwise specified) Collector-Emitter Voltage 635, 636635, 636635, 636635, 636635, 636 BVCEO 45 - - V IC=10mA, I B=0 637, 638637, 638637, 638637, 638637, 638 60 - - V 639, 640639, 640639, 640639, 640639, 640 80 - - V Collector-Base Voltage 635, 636635, 636635, 636635, 636635, 636 BVCBO 45 - - V IC=100µA, I E=0 637, 638637, 638637, 638637, 638637, 638 60 - - V 639, 640639, 640639, 640639, 640639, 640 100 - - V Emitter-Base Voltage IE=10µA, I C=0 BV EBO 5- - V Collector Cutoff Current VCB=30V, I E=0 I CBO - - 100 nA VCB=30V, I E=0, Ta=125°C - 10 µA Base Emitter On Voltage IC=500mA, V CE=2V V BE(on)* - - 1.0 V Collector-Emitter (Sat) Voltage IC=500mA, I B=50mA V CE(sat)* - - 0.5 V D.C. Current Gain IC=5mA, V CE=2V 635, 636635, 636635, 636635, 636635, 636 hFE 25 - - IC=150mA, V CE=2V* 637, 638637, 638637, 638637, 638637, 638 40 - 160 639, 640639, 640639, 640639, 640639, 640 40 - 160 IC=500mA, V CE=2V* 25 - - DYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICSDYNAMIC CHARACTERISTICS Input Capacitance VBE=0.5V, I C=0, NPNNPNNPNNPNNPN Cib -5 0 - p F f=1MHz PNPPNPPNPPNPPNP - 110 - pF Input Capacitance VCB=10V, I C=0, NPNNPNNPNNPNNPN Cob -7- p F f=1MHz PNPPNPPNPPNPPNP -9- p F Transition Frequency IC=10mA, V CE=5V, NPNNPNNPNNPNNPN fT - 130 - MHz f=35MHz PNPPNPPNPPNPPNP - 50 - MHz * Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. CTN635, CTN637, CTN639 CTN636, CTN638, CTN640

Continental Device India Limited Data Sheet Page 3 of 4 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 DC Current GainDC Current GainDC Current GainDC Current GainDC Current Gain VCE = 2V IC Collector Current (mA) Current Gain Bandwidth ProductCurrent Gain Bandwidth ProductCurrent Gain Bandwidth ProductCurrent Gain Bandwidth ProductCurrent Gain Bandwidth Product VCE = 2V IC Collector Current (mA) Saturation and On VoltagesSaturation and On VoltagesSaturation and On VoltagesSaturation and On VoltagesSaturation and On Voltages IC Collector Current (mA) VBEon at VCE = 2V VCEsat at IC/IB = 10 hFE - Current GainfT - Current Gain Bandwidth Product (MHz)Voltage (v) VBEsat at IC/IB = 10

Continental Device India Limited Data Sheet Page 4 of 4 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com