CT25AS-8 RENESAS | Alldatasheet
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Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 To all our customers
Feb.1999 VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1 CT25AS-8 450 ±0.1 7.0 I C = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA V(BR)CES ICES IGES VGE(th) 400 ±30 ±40 150 –40 ~ +150 –40 ~ +150 V V V A VCES VGES VGEM ICM Tj Tstg V µA µA V OUTLINE DRAWING Dimensions in mm MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25AS-8 STROBE FLASHER USE APPLICATION Strobe Flasher. Parameter ConditionsSymbol Ratings Unit Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol UnitParameter Test conditions Limits Min. Typ. Max. MAXIMUM RATINGS (Tc = 25°C) Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage MP-3 6.5 2.3 2.3 0.9MAX. 1 .0MAX. 2.3 1.0 0.5 ± 0.1 5.5 ± 0.2 10MAX. 2.3MIN. 1.5 ± 0.2 1 2 3 0.5 ± 0.2 0.8 5.0 ± 0.2 q GATE w COLLECTOR e EMITTER r COLLECTOR wr q e
Feb.1999 IXe Vtrig VCE R G VG IGBT C M + VCM Vtrig VG Ixe RECOMMEND CONDITION VCM = 330V IP = 130A C M = 300µF VGE = 28V MAXIMUM CONDITION 350V 150A 400µF 200 160 120 0 50 40 30 100 20 C M = 400µF TC = 50°C< <TC = 70°C MAXIMUM PULSE COLLECTOR CURRENT GATE-EMITTER VOLTAGE V GE (V) PULSE COLLECTOR CURRENT I CM (A) TRIGGER SIGNAL Xe TUBE CURRENT VOLTAGE IGBT GATE MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25AS-8 STROBE FLASHER USE PERFORMANCE CURVES APPLICATION EXAMPLE Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (In general, it is satisfied if RG ≥ 30Ω ) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 150A : full luminescence condition) of main condenser (CM =400µF). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Figure 1