CST10S40CT CITC | Alldatasheet

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■ Features ■ Mechanical data ■ Maximum ratings and electrical characteristics O Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. ■ Outline Low forward voltage drop.• Excellent high temperature stability.• Fast switching capability.• Lead-free parts meet environmental standards of • MIL-STD-19500 /228 CST10S40CT 10A Trench Low Barrier Diode VF IR Forward voltage drop (per diode) Reverse current (per diode) Parameter O V = V T = 25 CR RRM J O V = V T = 125 CR RRM J Conditions Symbol TYP. UNIT 100 0.5 mV mA MIN. MAX. O I = 5A, T = 25 CF J O I = 5A, T = 125 CF J 350 380 440 520O I = 10A, T = 25 CF J IO IFSM IRRM T , TJ STG Forward rectified current (total device) Forward surge current (per diode) Thermal resistance(1) (per diode) Operating and Storage temperature Parameter 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Conditions Symbol CST10S40CT UNIT -65 ~ +150 150 A A O C/W O C 2RθJCJunction to case Peak repetitive reverse surge current A2us - 1kHz 3 Marking code CST10S40CT DC blocking voltage Working peak reverse voltage Peak repetitive reverse voltage VRM VRWM VRRM 40 V (per diode) Document ID : DS-11K7K Revised Date : 2015/05/26 Revision : C4

  • Epoxy : UL94-V0 rated flame retardant. .• Case : JEDEC TO-220AB molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026. ed.• Polarity: As mark .• Mounting Position : Any .• Weight : Approximated 2.25 gram PIN 1 PIN 3 PIN 2 TO-220AB symbol Dimensions in inches(millimeters) A B C D E F G H I J K L M N ØP Min Max symbol Dimensions in inches(millimeters) A B C D E F G H I J K L M N ØP Min Max Alternate Marking code AØP B 1 2 3 J L C D E F G H I K M N Marking code AØP B 1 2 3 J L C D E F G H I K M N C

■ Rating and characteristic curves Reverse Voltage,V (V)R Fig. 2 - Instantaneous Forward Characteristics (per diode) Fig. 3 - Reverse Characteristics (per diode) Instantaneous Forward Voltage,V (Volts)F Fig.4 - Forward Current Derating Curve (per diode) Average Forward Current,I (A)F(AV) 0 25 50 75 100 125 150 175 O Ambient Temperature,T ( C)A single phase half wave 60Hz resistive or inductive load Fig. 1 - Forward Power Dissipation (per diode) Average Forward Current,I (A)F(AV) Power Dissipation,P (W)D 0 5 10 15 20 Instantaneous Forward Current (A) 100 0.1 T =125°CA T =85°CA T =25°CA T =150°CA T =100°CA Instantaneous Reverse Current,I (mA)R 10 20 30 40 50 100 0.1 O T =25 CA 0.01 O T =150 CA O T =125 CA O T =100 CA O T =85 CA CST10S40CT 10A Trench Low Barrier Diode Document ID : DS-11K7K Revised Date : 2015/05/26 Revision : C4

■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 CST10S40CT 10A Trench Low Barrier Diode Document ID : DS-11K7K Revised Date : 2015/05/26 Revision : C4