CSRP2X450-120F1B DACO | Alldatasheet

Document overview

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Technical content

Features

  • High surge current capable
  • Zero reverse recovery current
  • High bandwidth SiC SCHOTTKY DIODE TYPE 450A DACO SEMICONDUCTOR CO., LTD. CSRP2×450-120F1B - 55 to +175Operating Junction Temperature : +175-55 toStorage Temperature : March 2023 Rev. 2.1 Part Number Maximum Recurrent Peak Reverse Voltage 1200VCSRP2×450-120F1B 1200V Maximum DC Blocking Voltage Benefits

Applications

  • Motor drives
  • Switch mode power supplies
  • Ev chargers
  • Solar inverters
  • Welding equipment
  • Unipolar rectifier
  • Zero switching loss
  • Higher efficiency 3-5 3-5
  • Temperature independent switching behavior
  • VDC 1200 V
  • Smaller heat sink
  • Parallel devices without thermal runaway
  • Power factor correction
  • Diode snubber
  • Automotive
  • Induction heating Dimensions in mm (1 mm = 0.0394") gWeight IF,max VRRM V VIsolation voltage 3000 Repetitive peak reverse voltage Tj=25 °C 1200 Non-repetitive peak forward current (per diode) TC=25 °C, tp=10 μs 16800 Surge non-repetitive forward current sine halfwave (per diode) IFSM TC=25 °C, tp=8.3 ms 3600 TC=150 °C, tp=8.3 ms 2625 Maximum Rating Symbol Conditions Value Unit Continuous forward current IF TC=100 °C 450 A (per diode) Viso 50/60 Hz, t=1min I ≤ 1mAISOL TC=150 °C, tp=10 μs 10500 NmMounting torque 324 A1 / K2 A2 K1 ADR www.dacosemi.com.tw - 1 - 16±1 17±0.5 6.9±0.5 106.4±1 28±0.5 28±0.5 92.8±0.5 47.8±0.5 61.4±1 0.3 0.3 0.3 1/4-20 UNC FULL A1/K2 A2 K1 To heatsink To terminal Md 1/4-20 unc full

www.dacosemi.com.tw - 2 - DACO SEMICONDUCTOR CO., LTD. CSRP2×450-120F1B min. typ. max. VDC 1,200 - - -1 .61 .8 -2 .12 .4 - 100 200 - 150 500 Reverse current IR VR =1,200V, Tj =25 °C VR =1,200V, Tj =175 °C DC blocking voltage V Diode forward voltage VF IF =450A, Tj =25 °C IF =450A, Tj =175 °C Electrical Characteristics, at Tj=25 °C, unless otherwise specified. (per diode) Static Characteristics Symbol Conditions Values Unit ȫA Qrr -1 , 8 2 4 - n C - 30,845 - -2 , 3 1 1 - -1 , 7 3 6 - RȧJC 0.02 oC/W pFVR=400V, f=1 MHz Thermal Characteristics (per diode) Thermal resistance from junction to case Total capacitive charge VR=800V, Tj =25 °C Total capacitance C VR=0V, f=1 MHz AC Characteristics (per diode) typ. Static Characteristics Symbol Values Unit min. typ. max. Static Characteristics Symbol Conditions Values Unit Tj=25 °C Tj=25 °C March 2023 Rev. 2.1 VR=800V, f=1 MHz Tj=25 °C

www.dacosemi.com.tw - 3 - DACO SEMICONDUCTOR CO., LTD. Typical Performance CSRP2×450-120F1B Forward Characteristics (parameterized on Tj) Reverse Characteristics (parameterized on Tj) Current Derating 180 270 360 450 540 IF (A) VF (V) 0.001 0.01 0.1 1.0 0 20 40 60 80 100 IR (mA) Volts (%) 180 270 360 450 25 75 125 175 IF (A) TC (°C) Capacitance Recovery Charge 7,711 15,422 23,133 30,844 38,555 0 1 10 100 1000 C (pF) VR (V) Tj =25°C 10 30 50 70 90 25°C 175°C 75°C 125°C 630 2.4 2.8 540 630 Single Phase,Half Wave 60Hz Res istive or Inductive Load Forward Surge Current March 2023 Rev. 2.1 IFSM (A) Cycles Numder of Cycles At 60Hz - Cycles 720 1,440 2,160 2,880 3,600 1 1 0 100 4,320 8.3ms Single Half Sine Wave JEDEC method Tj =25°C 200 400 600 800 1000 1200Qrr (nC) VR (V) 1800 1600 1400 Tj =25°C 175°C 125°C 75°C 25°C 0 100 200 300 400 500 600 700 800 2000

www.dacosemi.com.tw Disclaimer DACO SEMICONDUCTOR CO.,LTD. CSRP2×450-120F1B - 4 - DACO Semiconductor reserves the right to make modifications, enhancements, improvements, corrections, or other changes to this document and any product described herein without prior notice. DACO Semiconductor makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does DACO Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any liability, including without limitation special, consequential or incidental damages. Purchasers are responsible for its products and applications using DACO Semiconductor products, including compliance with all laws, regulations, and safety requirements or standards, regardless of any support or application information provided by DACO Semiconductor. “Typical” parameters that may be provided in DACO Semiconductor datasheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by the customer’s technical experts. DACO Semiconductor products are not designed, authorized, or warranted to be suitable for use in life support, life-critical or safety-critical systems, or equipment, nor in applications where failure or malfunction of DACO Semiconductor’s product can reasonably be expected to result in personal injury, death or severe property or environmental damage. DACO Semiconductor accepts no liability for the inclusion and/or use of DACO Semiconductor’s products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Purchasers who buy or use DACO Semiconductor products for any unintended or unauthorized applications are required to indemnify and absolve DACO Semiconductor, its suppliers, and distributors from any claims, costs, damages, expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that DACO Semiconductor was negligent regarding the design or manufacture of the part. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or by any information storage and retrieval system, or otherwise, without the prior written permission of DACO Semiconductor Co., Ltd. March 2023 Rev. 2.1