CSPEMI307A ONSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

Features

  • Four channels of combined EMI/RFI filtering + ESD protection
  • Four additional channels of ESD-only protection
  • EMI/ESD channels provide greater than 32dB attenuation at 1GHz
  • ±15kV ESD protection on all channels (IEC 61000-4-2 Level 4, contact discharge)
  • ± 30kV ESD protection on all channels (HBM)
  • Chip Scale Package features extremely low lead inductance for optimum filter and ESD performance
  • 15-bump, 2.960mm X 1.330mm footprint Chip Scale Package (CSP)
  • Lead-free version available

Applications

  • EMI filtering and ESD protection for both data and I/O ports
  • Outer 4 channels provide ESD protection for USB lines and other I/O port applications
  • Wireless Handsets
  • Handheld PCs / PDAs
  • MP3 Players
  • Notebooks
  • Desktop PCs Product Description The CSPEMI307A is a multichannel EMI/ESD array offering a combination of four low-pass filter + ES D channels to reduce EMI/RFI emissions on a data port and four dedicated ESD-only channels intended specifically for ESD protection on a USB port. Each EMI/RFI channel integrates a high quality pi-style filter (C-R-C) which provides greater than 30dB attenuation in the 800-2700 MHz range. These pi- style filters support bidirectional filtering, cont rolling EMI both to and from a data port connector. The CSPEMI307A provides a high-level of ESD protection on all eight channels for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The input pins are designed and characterized to safely dissipate ESD strikes of ±15kV, exceeding the maximum requirement of the IEC 61000-4-2 international standard. Using the MIL-STD-883 (Method 3015) specification for Human Body Model (HBM) ESD, the device provides protection for contact discharges t o greater than ±30kV. The CSPEMI307A is particularly well suited for portable electronics (e.g., cellular telephones, PD As, notebook computers) because of its small package footprint and low weight. The CSPEMI307A is available in a space-saving, low-profile Chip Scale Package with optional lead-free finishing.

Rev. 2 | Page 2 of 12 | www.onsemi.com Electrical Schematic Lead-free devices are specified by using a " +" character for the top side orientation mark.

Rev. 2 | Page 3 of 12 | www.onsemi.com PIN DESCRIPTIONS PIN(s) NAME DESCRIPTION A1 ESD_1 ESD Channel 1 A2 FILTER+ESD_1 Filter + ESD Channel 1 A3 FILTER+ESD_2 Filter + ESD Channel 2 A4 FILTER+ESD_3 Filter + ESD Channel 3 A5 FILTER+ESD_4 Filter + ESD Channel 4 A6 ESD_2 ESD Channel 2 B1-B3 GND Device Ground C1 ESD_3 ESD Channel 3 C2 FILTER+ESD_1 Filter + ESD Channel 1 C3 FILTER+ESD_2 Filter + ESD Channel 2 C4 FILTER+ESD_3 Filter + ESD Channel 3 C5 FILTER+ESD_4 Filter + ESD Channel 4 C6 ESD_4 ESD Channel 4

Ordering Information

PART NUMBERING INFORMATION Standard Finish Lead-free Finish Bumps Package Ordering Part Number Part Marking Ordering Part Number Part Marking

15 CSP CSPEMI307A 307A CSPEMI307AG 307A

Note 1: Parts are shipped in Tape & Reel form unless otherwise specified. Note 2: Lead-free devices are specified by using a " +" character for the top side orientation mark.

Rev. 2 | Page 4 of 12 | www.onsemi.com Specifications ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Storage Temperature Range -65 to +150 ° C DC Power per Resistor 100 mW STANDARD OPERATING CONDITIONS PARAMETER RATING UNITS Operating Temperature Range -40 to +85 ° C

Rev. 2 | Page 5 of 12 | www.onsemi.com ELECTRICAL OPERATING CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS R Resistance 80 100 120 Ω C Capacitance At 2.5V DC 24 30 36 pF TCR Temperature Coefficient of Resistance 1200 ppm/° C TCC Temperature Coefficient of Capacitance At 2.5V DC -300 ppm/° C VDIODE Diode Voltage (reverse bias) IDIODE =10 µ A 5.5 V ILEAK Diode Leakage Current (reverse bias) V DIODE =3.3V 100 nA VSIG Signal Voltage Positive Clamp Negative Clamp I LOAD = 10mA 5.6 -0.4 6.8 -0.8 9.0 -1.5 V V VESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 Notes 2 and 4 ±30 ±15 kV kV VCL Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV Positive Transients Negative Transients Notes 2,3 and 4 +10 - 5 V V fC Cut-off frequency ZSOURCE = 50 Ω , Z LOAD = 50 Ω R = 100 Ω , C = 30pF 64 MHz Note 1: T A=25 °C unless otherwise specified. Note 2: ESD applied to input and output pins with r espect to GND, one at a time. Note 3: Clamping voltage is measured at the opposit e side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A2, then clamping voltage is measured at Pin C2. Note 4: Unused pins are left open.

Figure 5. Comparison of Filter Response Curves for CSPEMI307A VS. DC Bias

Rev. 2 | Page 11 of 12 | www.onsemi.com Mechanical Details CSP Mechanical Specifications The CSPEMI307A is offered in a custom Chip Scale Package (CSP). Dimensions are presented below. For complete information on the CSP, see the California Micro Devices CSP Package Information document. PACKAGE DIMENSIONS Package Custom CSP Bumps 15 Millimeters Inches Dim Min Nom Max Min Nom Max # per tape and reel 3500 pieces Controlling dimension: millimeters 0.30 DIA. 63/37 Sn/Pb (Eutectic) or SOLDER BUMPS 96.8/2.6/0.6 Sn/Ag/Cu (Lead-free) Package Dimensions for CSPEMI307A Chip Scale Package

Figure 11. Tape and Reel Mechanical Data Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.