CSPEMI306A CALMIRCO | Alldatasheet
Document overview
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Technical content
Features
- Six channels of EMI filtering for data ports Pi-style EMI filters in a capacitor-resistor-capacitor (C-R-C) network Greater than 32dB attenuation at 1GHz +15kV ESD protection on each channel (IEC 61000-4-2 Level 4, contact discharge) +30kV ESD protection on each channel (HBM) Chip Scale Package features extremely low lead inductance for optimum filter and ESD performance 15-bump, 2.960mm X 1.330mm footprint Chip Scale Package (CSP) Lead-free version available
Applications
EMI filtering and ESD protection for both data and I/O ports Wireless Handsets Handheld PCs / PDAs MP3 Players Notebooks Desktop PCs Product Description The CSPEMI306A is a six channel low-pass filter array that reduces EMI/RFI emissions while at the same time providing ESD protection. It is used on data ports on mobile devices. To reduce EMI/RFI emissions, the CSPEMI306A integrates a pi-style filter (C-R-C) for each of the 6 channels. Each high quality filter provides greater than 30dB attenuation in the 800-2700 MHz range. These pi-style filters also support bidirectional filtering, controlling EMI both to and from a data port connector. In addition, the CSPEMI306A provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge (ESD). The input pins are designed and characterized to safely dissipate ESD strikes of 15kV, exceeding the maximum requirement of the IEC 61000-4-2 interna- tional standard. Using the MIL-STD-883 (Method 3015) specification for Human Body Model (HBM) ESD, the device provides protection for contact discharges to greater than 30kV. The CSPEMI 306A is particularly well suited for porta- ble electronics (e.g., cellular telephones, PDAs, note- book computers) because of its small package footprint and low weight. The CSPEMI306A is available in a space-saving, low-profile Chip Scale Package with optional lead-free finishing. Electrical Schematic 100Ω 30pF30pF FILTERn* GND FILTERn* * See Package/Pinout Diagram for expanded pin information. (Pins B1-B3) 1 of 6 EMI/RFI + ESD Channels
© 2003 California Micro Devices Corp. All rights reserved. CSPEMI306A
Ordering Information
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified. Note 2: Lead-free devices are specified by using a " +" character for the top side orientation mark. PIN DESCRIPTIONS PIN(s) NAME DESCRIPTION A1 FILTER1 Filter Channel 1 A2 FILTER2 Filter Channel 2 A3 FILTER3 Filter Channel 3 A4 FILTER4 Filter Channel 4 A5 FILTER5 Filter Channel 5 A6 FILTER6 Filter Channel 6 B1-B3 GND Device Ground C1 FILTER1 Filter Channel 1 C2 FILTER2 Filter Channel 2 C3 FILTER3 Filter Channel 3 C4 FILTER4 Filter Channel 4 C5 FILTER5 Filter Channel 5 C6 FILTER6 Filter Channel 6 306A 4326 51 C B A Orientation Marking (see note 2) PACKAGE / PINOUT DIAGRAMS Notes: BOTTOM VIEW CSPEMI306A (Bumps Up View) TOP VIEW (Bumps Down View) FIL TER5 FIL TER6 GND FIL TER5 FIL TER6 A6A5 Orientation Marking C6C5 FIL TER3 FIL TER4 GND FIL TER3 FIL TER4 A4A3 C4C3 FIL TER1 FIL TER2 GND FIL TER1 FIL TER2 A2A1 C2C1 1) These drawings are not to scale. 2) Lead-free devices are specified by using a " +" character for the top side orientation mark. PART NUMBERING INFORMATION Bumps Package Standard Finish Lead-free Finish2 Ordering Part Number1 Part Marking Ordering Part Number1 Part Marking
15 CSP CSPEMI306A 306A CSPEMI306AG 306A
© 2003 California Micro Devices Corp. All rights reserved. CSPEMI306A Specifications Note 1: T A=25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pi n A1, then clamping voltage is measured at Pin C1. Note 4: Unused pins are left open Note 5: These parameters are guaranteed by design and characterization. ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Storage T emperature Range -65 to +150 °C DC Power per Resistor 100 mW STANDARD OPERATING CONDITIONS PARAMETER RATING UNITS Operating Temperature Range -40 to +85 °C ELECTRICAL OPERATING CHARACTERISTICS1 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS R Resistance 80 100 120 Ω C Capacitance At 2.5V DC 24 30 36 pF TCR T emperature Coefficient of Resistance 1200 ppm/°C TCC T emperature Coefficient of Capacitance At 2.5V DC -300 ppm/°C VDIODE Diode Voltage (reverse bias) I DIODE=10µA5 . 5 V ILEAK Diode Leakage Current (reverse bias) V DIODE=3.3V 100 nA VSIG Signal Voltage Positive Clamp Negative Clamp I LOAD = 10mA 5.6 -0.4 6.8 -0.8 9.0 -1.5 V V VESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 Notes 2,4 and 5 ±30 ±15 kV kV VCL Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV Positive Transients Negative Transients Notes 2,3,4 and 5 +10 V V fC Cut-off frequency ZSOURCE = 50Ω, ZLOAD = 50Ω R = 100Ω, C = 30pF 58 MHz
© 2003 California Micro Devices Corp. All rights reserved. Figure 7. Comparison of Filter Response Curves for CSPEMI306A VS. DC Bias
© 2003 California Micro Devices Corp. All rights reserved. Figure 13. Tape and Reel Mechanical Data P1Only including Draft.Concentric Around B.