CSPEMI306A ONSEMI | Alldatasheet

Document overview

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  • PDF pages: 13

Technical content

Features

  • Six channels of EMI filtering for data ports
  • Pi-style EMI filters in a capacitor-resistor- capacitor (C-R-C) network
  • Greater than 32dB attenuation at 1GHz +15kV ESD protection on each channel (IEC 61000-4-2 Level 4, contact discharge)
  • +30kV ESD protection on each channel (HBM)
  • Chip Scale Package features extremely low lead inductance for optimum filter and ESD performance
  • 15-bump, 2.960mm X 1.330mm footprint Chip Scale Package (CSP)
  • Lead-free version available

Applications

  • EMI filtering and ESD protection for both data and I/O ports
  • Wireless Handsets
  • Handheld PCs / PDAs
  • MP3 Players
  • Notebooks
  • Desktop PCs Product Description The CSPEMI306A is a six channel low-pass filter array that reduces EMI/RFI emissions while at the same time providing ESD protection. It is used on data ports on mobile devices. To reduce EMI/RFI emissions, the CSPEMI306A integrates a pi-style filter (C-R-C) for each of the 6 channels. Each hig h quality filter provides greater than 30dB attenuati on in the 800-2700 MHz range. These pi-style filters also support bidirectional filtering, controlling EMI bo th to and from a data port connector. In addition, the CSPEMI306A provides a very high level of protection for sensitive electronic compon ents that may be subjected to electrostatic discharge (ESD). The input pins safely dissipate ESD strikes of +15kV, exceeding the maximum requirement of the IEC 61000-4-2 international standard. Using the MIL - STD-883 (Method 3015) specification for Human Body Model (HBM) ESD, the device provides protection for contact discharges to greater than +30kV. The CSPEMI306A is particularly well suited for portable electronics (e.g., cellular telephones, PD As, notebook computers) because of its small package footprint and low weight. The CSPEMI306A is available in a space-saving, low-profile Chip Scale Package with optional lead-free finishing.

Rev. 2 | Page 2 of 13 | www.onsemi.com Electrical Schematic 1 of 6 EMI/RFI + ESD Channels Lead-free devices are specified by using a " +" character for the top side orientation mark.

Rev. 2 | Page 3 of 13 | www.onsemi.com PIN DESCRIPTIONS PIN(s) NAME DESCRIPTION A1 FILTER1 Filter Channel 1 A2 FILTER2 Filter Channel 2 A3 FILTER3 Filter Channel 3 A4 FILTER4 Filter Channel 4 A5 FILTER5 Filter Channel 5 A6 FILTER6 Filter Channel 6 B1-B3 GND Device Ground C1 FILTER1 Filter Channel 1 C2 FILTER2 Filter Channel 2 C3 FILTER3 Filter Channel 3 C4 FILTER4 Filter Channel 4 C5 FILTER5 Filter Channel 5 C6 FILTER6 Filter Channel 6

Ordering Information

PART NUMBERING INFORMATION Standard Finish Lead-free Finish Bumps Package Ordering Part Number Part Marking Ordering Part Number Part Marking

15 CSP CSPEMI306A 306A CSPEMI306AG 306A

Note 1: Parts are shipped in Tape & Reel form unless otherwise specified. Note 2: Lead-free devices are specified by using a " +" character for the top side orientation mark.

Rev. 2 | Page 4 of 13 | www.onsemi.com Specifications ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Storage Temperature Range -65 to +150 ° C DC Power per Resistor 100 mW STANDARD OPERATING CONDITIONS PARAMETER RATING UNITS Operating Temperature Range -40 to +85 ° C

Rev. 2 | Page 5 of 13 | www.onsemi.com ELECTRICAL OPERATING CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS R Resistance 80 100 120 Ω C Capacitance At 2.5V DC 24 30 36 pF TCR Temperature Coefficient of Resistance 1200 ppm/° C TCC Temperature Coefficient of Capacitance At 2.5V DC -300 ppm/° C VDIODE Diode Voltage (reverse bias) IDIODE =10 µ A 5.5 V ILEAK Diode Leakage Current (reverse bias) V DIODE =3.3V 100 nA VSIG Signal Voltage Positive Clamp Negative Clamp I LOAD = 10mA 5.6 -0.4 6.8 -0.8 9.0 -1.5 V V VESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 Notes 2 and 4 ±30 ±15 kV kV VCL Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV Positive Transients Negative Transients Notes 2,3 and 4 +10 V V fC Cut-off frequency ZSOURCE = 50 Ω , Z LOAD = 50 Ω R = 100 Ω , C = 30pF 58 MHz Note 1: T A=25 °C unless otherwise specified. Note 2: ESD applied to input and output pins with r espect to GND, one at a time. Note 3: Clamping voltage is measured at the opposit e side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping voltage is measured at Pin C1. Note 4: Unused pins are left open.

Figure 7. Comparison of Filter Response Curves for CSPEMI306A VS. DC Bias

Rev. 2 | Page 12 of 13 | www.onsemi.com Mechanical Details CSP Mechanical Specifications The CSPEMI306A is offered in a custom Chip Scale Package (CSP). Dimensions are presented below. For complete information on CMD’s chip scale packaging, see the California Micro Devices CSP Package Information document. PACKAGE DIMENSIONS Package Custom CSP Bumps 15 Millimeters Inches Dim Min Nom Max Min Nom Max # per tape and reel 3500 pieces Controlling dimension: millimeters 0.30 DIA. 63/37 Sn/Pb (Eutectic) or SOLDER BUMPS 96.8/2.6/0.6 Sn/Ag/Cu (Lead-free) Package Dimensions for CSPEMI306A Chip Scale Package

Figure 13. Tape and Reel Mechanical Data Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.