CSIC10-1200 CENTRAL | Alldatasheet

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10 AMP, 1200 VOLT

DESCRIPTION: The CENTRAL SEMICONDUCTOR CSIC10-1200 is a silicon carbide Schottky rectifier designed for high frequency systems where energy efficiency and thermal performance are critical design elements. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS Peak Repetitive Reverse Voltage V RRM 1200 V Peak Reverse Surge Voltage V RSM 1200 V DC Blocking Voltage V R 1200 V Average Rectified Forward Current (TC=130°C) I O 10 A Continuous Forward Current (TC=130°C) I F 14 A Peak Forward Surge Current, tp=8.3ms I FSM 50 A Power Dissipation P D 150 W Power Dissipation (TC=130°C) P D 42 W Operating and Storage Junction Temperature T J, Tstg -55 to +175 °C Thermal Resistance ΘJC 1.0 °C/W ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNIT IR V R=1200V 60 400 μA IR V R=1200V, TJ=175°C 0.09 1.0 mA VF I F=10A 1.55 1.8 V VF I F=10A, TJ=175°C 2.3 3.0 V QC VR=800V, IF=10A, di/dt=750A/μs 54 nC CJ V R=1.0V, f=1.0MHz 477 pF CJ V R=300V, f=1.0MHz 50 pF CJ V R=600V, f=1.0MHz 41 pF FEATURES:

  • Positive temperature coefficient
  • High reverse voltage
  • High operating temperaure (175°C MAX)
  • Stable switching over temperature extremes APPLICATIONS:
  • Power inverters
  • Industrial motor drives
  • Switch-mode power supplies
  • Power factor correction
  • Over-current protection TO-220-2 CASE R2 (4-February 2013) www.centralsemi.com

LEAD CODE: 1) Cathode 2) Anode Tab is Common to Pin 1 MARKING: FULL PART NUMBER TO-220-2 CASE - MECHANICAL OUTLINE www.centralsemi.com R2 (4-February 2013)

TYPICAL ELECTRICAL CHARACTERISTICS R2 (4-February 2013) www.centralsemi.com CSIC10-1200 SILICON CARBIDE SCHOTTKY RECTIFIER