CSH13003H6D DGNJDZ | Alldatasheet
Document overview
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Technical content
CSH13003H6D TRANSISTOR (NPN)
FEATURES
- power switching applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 1.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO I C =5mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO I C=10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO I E=2mA, IC=0 9 V Collector cut-off current I CBO V CB=700V,IE=0 1 mA Collector cut-off current I CEO V CE=400V,IB=0 0.5 mA Emitter cut-off current I EBO V EB=9V, IC=0 1 mA hFE1 V CE=5V, IC= 0.5 A 8 40 DC current gain hFE2 V CE=5V, IC= 1.5A 5 Collector-emitter saturation voltage VCE(sat) I C=1A,IB=0.25A 0.6 V Base-emitter saturation voltage VBE(sat) I C=1A,IB=0.25A 1.2 V Transition frequency fT V CE=10V,Ic=100mA, f =1MHz 5 MHz Fall time tf I C=1A, IB1=-IB2=0.2A, VCC=100V 0.5 µs 1 2 3 TO-126 1.BASE 2.COLLECTOR 3.EMITTER Storage time tS IC=250mA (UI9600) 2 4 μs CLASSIFICATION OF h FE(1) Range 10-15 15-20 20-25 25-30 30-35 35-40 CLASSIFICATION OF tS Rank A1 A2 B1 B2 DONGGUAN NANJING ELECTRONICS LTD., 727272723ODVWLF(QFDSVXODWH3ODVWLF(QFDSVXODWH3ODVWLF(QFDSVXODWH3ODVWLF(QFDSVXODWH7UDQVLVWRUV7UDQVLVWRUV7UDQVLVWRUV7UDQVLVWRUV
Typical Characteristics CSH13003H6D