CSFB201-G_12 COMCHIP | Alldatasheet
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Technical content
Features
-Ideal for surface mount applications. -Easy pick and place. -Plastic package has Underwriters Lab. flammability classification 94V-0. -Super fast recovery time 35nS. -Built-in strain relief. -Low forward voltage drop. Mechanical data -Case: JEDEC DO-214AA, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. -Polarity: Color band denotes cathode end. -Approx. weight: 0.093 grams CSFB201-G Thru. CSFB205-G Maximum Ratings and Electrical Characteristics Dimensions in inches and (millimeter) QW-BS002 CSFB201-G Comchip Technology CO., LTD. Max. repetitive peak reverse voltage Max. DC blocking voltage Max. RMS voltage Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. average forward current Max. instantaneous forward at 2.0A Reverse recovery time O Max. DC reverse current at TA=25 CO rated DC blocking voltage TA=125 C Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature voltage CSFB202-G CSFB203-G CSFB204-G CSFB205-G UnitsSymbolParameter VRRM VDC VRMS IFSM IO VF Trr IR RθJL TJ TSTG 100 100 0.92 200 200 140 2.0 5.0 350 150 -55 to +150 400 400 280 1.25 600 600 420 1.3 V V V A A V nS μA O C/W O C O C DO-214AA (SMB) 0.155(3.94) 0.130(3.30) 0.083(2.11) 0.075(1.91) 0.220(5.59) 0.006(0.15) 0.008(0.20) 0.004(0.10) 0.050(1.27) 0.030(0.76) 0.096(2.44) 0.083(2.13) 0.185(4.70) 0.160(4.06)
RATING AND CHARACTERISTIC CURVES (CSFB201-G thru CSFB205-G) Percent of Rated Peak Reverse Voltage (%) 1401208060200 Fig.1 Reverse Characteristics 0.1 100 1000 Rever e urr n (μ )s C e t A Forward Voltage (V) 0.4 Fig.2 Forward Characteristics 0.01 o w rd C rren (A)F r a u t 0.1 100 1.0 Reverse Voltage (V) 0.1 Fig.3 Junction Capacitance J n ti n apacian ce(p )u c o C t F 1 10 1000 Number of Cycles at 60Hz Fig.4 Non-repetitive Forward Surge Current Peak F orward Surge C urrent A )( Comchip Technology CO., LTD. Page 2 REV:A 0.8 1.2 1.81.6 1 10 100 Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 50Ω NONINDUCTIVE 10Ω NONINDUCTIVE (+) 25Vdc (approx.) (-) D.U.T. NON- INDUCTIVE OSCILLLISCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) (+) (-) NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF. 2. Rise time=10ns max., input impedance=50Ω. trr Set time base for 50 / 10nS / cm 1cm -1.0A -0.25A +0.5A Fig.6 Current Derating Curve O Ambient Temperature ( C) Average Forward Current (A) 0 5025 75 100 150125 175 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Single phase Half wave 60Hz SMD Super Fast Recovery Rectifiers 40 100 O TJ=125 C O TJ=75 C O TJ=25 C CSFB201-G~203-G CSFB204-G CSFB205-G O TJ=25 C Pulse width 300μS 4% duty cycle 0.6 1.4 O TJ=25 C 8.3ms single half sine wave, JEDEC method 100 O TJ=25 C f=1MHz Vsig=50mVp-p