CSF30100CT-A CITC | Alldatasheet

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■ Features ■ Mechanical data ■ Maximum ratings and electrical characteristics O Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Low forward voltage drop.• Excellent high temperature stability.• Fast switching capability.• Suffix "G" indicates Halogen-free part, ex.CSF30100 G-A.• CT Lead-free parts meet environmental standards of • MIL-STD-19500 /228 Forward voltage drop (per diode) Reverse current (per diode) Parameter IO IFSM IRRM T , TJ STG Forward rectified current (total device) Forward surge current (per diode) Thermal resistance(1) (per diode) Operating and Storage temperature Parameter 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Conditions Symbol CSF30100CT-A UNIT -55 ~ +150 180 A A O C/W O C 4RθJCJunction to case Peak repetitive reverse surge current A2us - 1kHz 1 Marking code CSF30100CT DC blocking voltage Working peak reverse voltage Peak repetitive reverse voltage VRM VRWM VRRM 100 V (per diode) VF IR O V = V T = 25 CR RRM J O V = V T = 125 CR RRM J Conditions Symbol TYP. UNIT 0.1 mV mA MIN. MAX. O I = 15A, T = 25 CF J O I = 15A, T = 125 CF J 750 850 CSF30100CT-A Document ID : DS-11KBT Revised Date : 2015/12/16 Revision : C7

  • Epoxy : UL94-V0 rated flame retardant. .• Case : JEDEC ITO-220AB molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026. ed.• Polarity: As mark .• Mounting Position : Any .• Weight : Approximated 2.25 gram ■ Outline ITO-220AB symbol Dimensions in inches(millimeters) A B C D E F G H I J K L M N ØP Min Max symbol Dimensions in inches(millimeters) A B C D E F G H I J K L M N ØP Min Max - 0.161(4.1) Alternate PIN 1 PIN 3 PIN 2 Marking code A 1 2 3 J B C D E F G H I K L M N ØP Marking code A 1 2 3 J B C D E F G H I K L M N ØP Chip Integration Technology Corporation Super Low Barrier High Voltage Power Rectifier Main Product Characteristics IF(AV) 2x15A VRRM TJ V(Typ) 100V O 150 C 0.64V 640

■ Rating and characteristic curves Fig.1 - Forward Current Derating Curve (per diode) Average Forward Current,I (A)F(AV) 0 25 50 75 100 125 150 175 O Ambient Temperature,T ( C)A single phase half wave 60Hz resistive or inductive load Reverse Voltage,V (V)R Fig. 3 - Reverse Characteristics (per diode) Instantaneous Reverse Current,I (mA)R 0 20 40 60 80 100 100 0.1 0.01 O T =25 CA O T =85 CA O T =100 CA O T =150 CA O T =125 CA O T =50 CA Fig. 2 - Instantaneous Forward Characteristics (per diode) Instantaneous Forward Voltage,V (Volts)F Instantaneous Forward Current,I (A)F 100 0.1 0.01 T =25°CA T =100°CA T =125°CA T =150°CA T =85°CA T =50°CA CSF30100CT-A Chip Integration Technology Corporation Super Low Barrier High Voltage Power Rectifier Document ID : DS-11KBT Revised Date : 2015/12/16 Revision : C7

■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 CSF30100CT-A Chip Integration Technology Corporation Super Low Barrier High Voltage Power Rectifier Document ID : DS-11KBT Revised Date : 2015/12/16 Revision : C7