CSD95372BQ5M_V01 TI | Alldatasheet
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+Is1 -Is2 +Is2 -Is2 PWM2 VOUT SS RT VCC VOUT VOUT VIN Multiphase Controller CSD95372B CSD95372B PGND TSEN 0 10 20 30 40 50 60 100 Output Current (A) Efficiency (%) Power Loss (W) VDD = 5V VIN = 12V VOUT = 1.2V LOUT = .225µH fSW = 500kHz TA = 25ºC G001 Product Folder Sample & Buy T echnical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD95372BQ5M SLPS499B –MARCH 2014–REVISED MARCH 2016 CSD95372BQ5MSynchronousBuckNexFET™ SmartPowerStage
1 Features
1• 60 A Continuous Operating Current Capability
- 93.4% System Efficiency at 30 A
- Low Power Loss of 2.8 W at 30 A
- High-Frequency Operation (up to 1.25 MHz)
- Diode Emulation Mode With FCCM
- Temperature Compensated Bi-Directional Current Sense
- Analog Temperature Output (600 mV at 0°C)
- Fault Monitoring – High-Side Short, Overcurrent, and Overtemperature Protection
- 3.3 and 5-V PWM Signal Compatible
- Tri-State PWM Input
- Integrated Bootstrap Diode
- Optimized Deadtime for Shoot Through Protection
- High-Density SON 5 × 6 mm Footprint
- Ultra-Low Inductance Package
- System Optimized PCB Footprint
- RoHS Compliant – Lead-Free Terminal Plating
- Halogen Free
2 Applications
- Multiphase Synchronous Buck Converters – High-Frequency Applications – High-Current, Low-Duty Cycle Applications
- POL DC-DC Converters
- Memory and Graphic Cards
- Desktop and Server VR11.x / VR12.x V-Core and Memory Synchronous Converters
3 Description
The CSD95372BQ5M NexFET™ smart power stage is a highly optimized design for use in a high-power, high-density Synchronous Buck converter. This product integrates the Driver IC and Power MOSFETs to complete the power stage switching function. This combination produces high-current, high-efficiency, and high-speed switching capability in a small 5-mm × 6-mm outline package. It also integrates the accurate current sensing and temperature sensing functionality to simplify system design and improve accuracy. In addition, the PCB footprint has been optimized to help reduce design time and simplify the completion of the overall system design. Device Information(1) Device Media Qty Package Ship CSD95372BQ5M 13-Inch Reel 2500 SON 5 mm × 6 mm Package Tape and ReelCSD95372BQ5MT 7-Inch Reel 250 (1) For all available packages, see the orderable addendum at the end of the data sheet. SPACER Application Diagram Typical Power Stage Efficiency and Power Loss
SLPS499B –MARCH 2014–REVISED MARCH 2016 www.ti.com Product Folder Links: CSD95372BQ5M Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Table of Contents
9 Mechanical, Packaging, and Orderable
4 Revision History
Changes from Revision A (June 2014) to Revision B Page Changes from Original (March 2014) to Revision A Page
BOOT_R VIN 6 7 PGND CSD95372BQ5M www.ti.com SLPS499B –MARCH 2014–REVISED MARCH 2016 Product Folder Links: CSD95372BQ5M Submit Documentation FeedbackCopyright © 2014–2016, Texas Instruments Incorporated
5 Pin Configuration and Functions
DESCRIPTION
BOOT 9 Bootstrap capacitor connection. Connect a minimum of 0.1 µF 16 V X7R ceramic capacitor from BOOT to BOOT_R pins. The bootstrap capacitor provides the charge to turn on the control FET. The bootstrap diode is integrated. BOOT_R 8 Return path for HS gate driver, connected to VSW internally. ENABLE 3 Enables device operation. If ENABLE = logic HIGH, turns on device. If ENABLE = logic LOW, the device is turned off and both MOSFET gates are actively pulled low. An internal 100-kΩ pulldown resistor will pull the ENABLE pin LOW if left floating. FCCM 10 This pin enables the Diode Emulation function. When this pin is held LOW, Diode Emulation Mode is enabled for sync FET. When FCCM is HIGH, the device is operated in Forced Continuous Conduction Mode. An internal 5 µA current source will pull the FCCM pin to 3.3 V if left floating. IOUT 1 Output of current sensing amplifier. V(IOUT) – V(REFIN) is proportional to the phase current. PGND 4 Power ground, connected directly to pin 13. PGND 13 Power ground PWM 12 Pulse width modulated 3-state input from external controller. Logic LOW sets control FET gate low and sync FET gate high. Logic HIGH sets control FET gate high and sync FET gate low. Open or High Z sets both MOSFET gates low if greater than the 3-state shutdown hold-off time (t3HT). REFIN 2 External reference voltage input for current sensing amplifier TAO/ FAULT 11 Temperature Analog Output. Reports a voltage proportional to the die temperature. An ORing diode is integrated in the IC. When used in multiphase application, a single wire can be used to connect the TAO pins of all the IC's. Only the highest temperature will be reported. TAO will be pulled up to 3.3 V if thermal shutdown occurs. TAO should be bypassed to PGND with a 1-nF 16-V X7R ceramic capacitor. VDD 5 Supply voltage to gate driver and internal circuitry VIN 7 Input voltage pin. Connect input capacitors close to this pin. VSW 6 Phase node connecting the HS MOSFET source and LS MOSFET drain – pin connection to the output inductor.
SLPS499B –MARCH 2014–REVISED MARCH 2016 www.ti.com Product Folder Links: CSD95372BQ5M Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. (2) Should not exceed 7 V
6 Specifications
6.1 Absolute Maximum Ratings
TA = 25°C (unless otherwise noted)(1) MIN MAX UNIT VIN to PGND –0.3 25 V VIN to VSW –0.3 25 V VIN to VSW (10 ns) –7 27 V VSW to PGND –0.3 20 V VSW to PGND (10 ns) –7 23 V VDD to PGND –0.3 7 V ENABLE, PWM, FCCM. TAO, IOUT, REFIN to PGND –0.3 VDD + 0.3 V V BOOT to BOOT_R(2) –0.3 VDD + 0.3 V V PD, power dissipation 12 W TJ, operating junction –55 150 °C
6.2 Handling Ratings
Tstg Storage temperature range –55 150 °C V(ESD) Electrostatic discharge Human body model (HBM) –2000 2000 V Charged device model (CDM) –500 500 V (1) Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings. (2) Measurement made with six 10 µF (TDK C3216X5R1C106KT or equivalent) ceramic capacitors placed across VIN to PGND pins. (3) System conditions as defined in Note 1. Peak output current is applied for tp = 50 µs.
6.3 Recommended Operating Conditions
TA = 25° (unless otherwise noted) MIN MAX UNIT VDD Gate drive voltage 4.5 5.5 V VIN Input supply voltage(1) 16 V VOUT Output voltage 5.5 V IOUT Continuous output current VIN = 12 V, VDD = 5 V, VOUT = 1.2 V, ƒSW = 500 kHz, LOUT = 0.225 µH(2) IOUT-PK Peak output current(3) 90 A ƒSW Switching frequency CBST = 0.1 µF (min) 1250 kHz On-time duty cycle ƒSW = 1 MHz 85 % Minimum PWM on-time 40 ns Operating temperature –40 125 °C inch (1.52 mm) thick FR4 board. (2) RθJB value based on hottest board temperature within 1 mm of the package.
6.4 Thermal Information
TA = 25°C (unless otherwise noted) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance (top of package)(1) 15 °C/W RθJB Junction-to-board thermal resistance(2) 1.5 °C/W
VCORE_OUTPWM1 CSP1 VSP VSN PWM2 CSP2 PWM3 CSP3 PWM4 CSP4 TPS53661 SDIO SCLK ALERT#To/From CPU I2C or PMBus (Optional) SLEW-MODE ENABLE VR_RDY VR_HOT# VR_FAULT# ENABLE GND VR_FAULT# SKIP#-RAMP V3R3 V1212V 3.3V PMB_DIO PMB_CLK PMB_ALERT# COMP VREF B-TMAX O-USR ADDR TSEN IMONIMON F-IMAX ISUM OCP-I PWM5 CSP5 PWM6 CSP6 12V CSD95372B VIN BOOT BOOT_R VDD ENABLE PGND PGND VSW PWM FCCM IOUT REFIN TAO/FAULT 12V CSD95372B VIN BOOT BOOT_R VDD ENABLE PGND PGND VSW PWM FCCM IOUT REFIN TAO/FAULT 12V CSD95372B VIN BOOT BOOT_R VDD ENABLE PGND PGND VSW PWM FCCM IOUT REFIN TAO/FAULT 12V CSD95372B VIN BOOT BOOT_R VDD ENABLE PGND PGND VSW PWM FCCM IOUT REFIN TAO/FAULT 12V CSD95372B VIN BOOT BOOT_R VDD ENABLE PGND PGND VSW PWM FCCM IOUT REFIN TAO/FAULT 12V CSD95372B VIN BOOT BOOT_R VDD ENABLE PGND PGND VSW PWM FCCM IOUT REFIN TAO/FAULT CSD95372BQ5M www.ti.com SLPS499B –MARCH 2014–REVISED MARCH 2016 Product Folder Links: CSD95372BQ5M Submit Documentation FeedbackCopyright © 2014–2016, Texas Instruments Incorporated
7 Application Schematic
SLPS499B –MARCH 2014–REVISED MARCH 2016 www.ti.com Product Folder Links: CSD95372BQ5M Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated
8 Device and Documentation Support
8.1 Trademarks
NexFET, DualCool are trademarks of Texas Instruments. All other trademarks are the property of their respective owners.
8.2 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
8.3 Glossary
SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions.
K e L b E d d1 d2 Exposed tie clip may vary A 0.300 x 45° CSD95372BQ5M www.ti.com SLPS499B –MARCH 2014–REVISED MARCH 2016 Product Folder Links: CSD95372BQ5M Submit Documentation FeedbackCopyright © 2014–2016, Texas Instruments Incorporated
9 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
9.1 Mechanical Drawing
b1 2.750 TYP 0.108 TYP b3 0.250 TYP 0.010 TYP e 0.500 TYP 0.020 TYP K 0.350 TYP 0.014 TYP
0.350(0.014) 2.750 (0.108) 0.250 (0.010) 5.639 (0.222) 5.300 (0.209) 3.400 (0.134) 5.900 (0.232) 1.000 (0.039) 0.500 (0.020) 0.410 (0.016) 6.300 (0.248) 0.370 (0.015) 0.300 (0.012) 0.331(0.013) 0.550 (0.022) 2.800 (0.110) R0.127 (R0.005) 0.300 (0.012) CSD95372BQ5M SLPS499B –MARCH 2014–REVISED MARCH 2016 www.ti.com Product Folder Links: CSD95372BQ5M Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated
9.2 Recommended PCB Land Pattern
- Dimensions are in mm (inches).
9.3 Recommended Stencil Opening
- Dimensions are in mm (inches). 2. Stencil thickness is 100 µm.
www.ti.com 7-Oct-2025 PACKAGING INFORMATION Orderable part number Status (1) Material type (2) Package | Pins Package qty | Carrier RoHS (3) Lead finish/ Ball material (4) MSL rating/ Peak reflow (5) Op temp (°C) Part marking (6) CSD95372BQ5M Active Production LSON-CLIP (DQP) | 12 2500 | LARGE T&R ROHS Exempt NIPDAU Level-2-260C-1 YEAR -55 to 150 95372BM CSD95372BQ5M.A Active Production LSON-CLIP (DQP) | 12 2500 | LARGE T&R ROHS Exempt NIPDAU Level-2-260C-1 YEAR -55 to 150 95372BM CSD95372BQ5M.B Active Production LSON-CLIP (DQP) | 12 2500 | LARGE T&R - Call TI Call TI -55 to 150 CSD95372BQ5MG4 Active Production LSON-CLIP (DQP) | 12 2500 | LARGE T&R ROHS Exempt NIPDAU Level-2-260C-1 YEAR -55 to 150 95372BM CSD95372BQ5MG4.A Active Production LSON-CLIP (DQP) | 12 2500 | LARGE T&R ROHS Exempt NIPDAU Level-2-260C-1 YEAR -55 to 150 95372BM CSD95372BQ5MG4.B Active Production LSON-CLIP (DQP) | 12 2500 | LARGE T&R - Call TI Call TI -55 to 150 CSD95372BQ5MT Active Production LSON-CLIP (DQP) | 12 250 | SMALL T&R ROHS Exempt NIPDAU | SN Level-2-260C-1 YEAR -55 to 150 95372BM CSD95372BQ5MT.A Active Production LSON-CLIP (DQP) | 12 250 | SMALL T&R ROHS Exempt NIPDAU Level-2-260C-1 YEAR -55 to 150 95372BM CSD95372BQ5MT.B Active Production LSON-CLIP (DQP) | 12 250 | SMALL T&R - Call TI Call TI -55 to 150 (1) Status: For more details on status, see our product life cycle. (2) Material type: When designated, preproduction parts are prototypes/experimental devices, and are not yet approved or released for full production. Testing and final process, including without limitation quality assurance, reliability performance testing, and/or process qualification, may not yet be complete, and this item is subject to further changes or possible discontinuation. If available for ordering, purchases will be subject to an additional waiver at checkout, and are intended for early internal evaluation purposes only. These items are sold without warranties of any kind. (3) RoHS values: Yes, No, RoHS Exempt. See the TI RoHS Statement for additional information and value definition. (4) Lead finish/Ball material: Parts may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. (5) MSL rating/Peak reflow: The moisture sensitivity level ratings and peak solder (reflow) temperatures. In the event that a part has multiple moisture sensitivity ratings, only the lowest level per JEDEC standards is shown. Refer to the shipping label for the actual reflow temperature that will be used to mount the part to the printed circuit board. (6) Part marking: There may be an additional marking, which relates to the logo, the lot trace code information, or the environmental category of the part. Multiple part markings will be inside parentheses. Only one part marking contained in parentheses and separated by a "~" will appear on a part. If a line is indented then it is a continuation of the previous line and the two combined represent the entire part marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative Addendum-Page 1
www.ti.com 7-Oct-2025 and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2
PACKAGE MATERIALS INFORMATION www.ti.com 18-Jun-2025 TAPE AND REEL INFORMATION Reel Width (W1) REEL DIMENSIONS A0B0K0WDimension designed to accommodate the component lengthDimension designed to accommodate the component thicknessOverall width of the carrier tapePitch between successive cavity centersDimension designed to accommodate the component width TAPE DIMENSIONSK0 P1B0WA0Cavity QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Pocket QuadrantsSprocket HolesQ1Q1Q2Q2Q3Q3Q4Q4User Direction of Feed P1ReelDiameter *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant CSD95372BQ5M LSON- CLIP CSD95372BQ5MG4 LSON- CLIP CSD95372BQ5MT LSON- CLIP Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION www.ti.com 18-Jun-2025 TAPE AND REEL BOX DIMENSIONS Width (mm) W LH *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD95372BQ5M LSON-CLIP DQP 12 2500 346.0 346.0 33.0 CSD95372BQ5MG4 LSON-CLIP DQP 12 2500 346.0 346.0 33.0 CSD95372BQ5MT LSON-CLIP DQP 12 250 210.0 185.0 35.0 Pack Materials-Page 2
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