CSD25301W1015

CSD25301W1015 TI1 | Alldatasheet

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−VGS − Gate to Source Voltage − V 100 150 200 250 300 0 1 2 3 4 5 6 R DS(on) − On-State Resistance − mW G006 ID = −1A TC = 125°C TC = 25°C Q g − Gate Charge − nC −VG − Gate Voltage − V G003 ID = −1A VDS = −10V CSD25301W1015 www.ti.com SLPS210B –AUGUST 2009–REVISED OCTOBER 2010 P-ChannelNexFET™ PowerMOSFET Check forSamples: CSD25301W1015 1FEATURES PRODUCT SUMMARY• UltraLow Qg and Qgd VDS DraintoSourceVoltage –20 V

• Small Footprint Q g Gate Charge Total(4.5V) 1.9 nC
• Low Profile0.62mm Height Q gd Gate Charge Gate toDrain 0.4 nC
• Pb Free VGS = –1.5V 175 m Ω R DS(on) DraintoSourceOn Resistance VGS = –2.5V 80 m Ω• RoHS Compliant VGS = –4.5V 62 m Ω• Halogen Free VGS(th) VoltageThreshold –0.75 V• CSP 1 × 1.5mm Wafer LevelPackage ORDERING INFORMATIONAPPLICATIONS Device Package Media Qty Ship• BatteryManagement 1 × 1.5Wafer Tape andCSD25301W1015 7-inchreel 3000• Load Switch LevelPackage Reel
• BatteryProtection ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C unlessotherwisestated VALUE UNIT VDS DraintoSourceVoltage –20 VThe devicehas been designedto deliverthe lowest VGS Gate toSourceVoltage ±8 Von resistanceand gatechargeinthesmallestoutline ID ContinuousDrainCurrent,TC = 25°C (1) –2.2 Apossiblewithexcellentthermalcharacteristicsin an ultralowprofile. IDM PulsedDrainCurrent,TA = 25°C (2) –8.8 A PD Power Dissipation(1) 1.5 WTop View TJ, OperatingJunctionand Storage –55 to150 °CTSTG TemperatureRange (1) R qJA = 85°C/W on 1in2 Cu (2oz.)on 0.060"thickFR4 PCB. (2) Pulsewidth≤300ms,dutycycle≤2% R DS(ON) vs VGS Gate Charge Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsofTexas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2009–2010,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SLPS210B –AUGUST 2009–REVISED OCTOBER 2010 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unlessotherwisestated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT StaticCharacteristics BV DSS DraintoSourceVoltage VGS = 0V,ID = –250mA –20 V IDSS DraintoSourceLeakage Current VGS = 0V,VDS = –16V –1 mA IGSS Gate toSourceLeakage Current VDS = 0V,VGS = ±8V –100 nA VGS(th) Gate toSourceThresholdVoltage VDS = VGS ,ID = –250mA –0.4 –0.75 –1 V VGS = –1.5V,ID = –1A 175 220 m Ω R DS(on) DraintoSourceOn Resistance VGS = –2.5V,ID = –1A 80 100 m Ω VGS = –4.5V,ID = –1A 62 75 m Ω gfs Transconductance VDS = –10V,ID = –1A 5.8 S Dynamic Characteristics C ISS InputCapacitance 210 270 pF C OSS OutputCapacitance VGS = 0V,VDS = –10V,f= 1MHz 90 120 pF C RSS ReverseTransferCapacitance 30 40 pF Q g Gate Charge Total(–4.5V) 1.9 2.5 nC Q gd Gate Charge Gate toDrain 0.4 nC VDS = –10V,ID = –1A Q gs Gate Charge Gate toSource 0.35 nC Qg(th) Gate Charge atVth 0.17 nC Q OSS OutputCharge VDS = –9.8V,VGS = 0V 1.7 nC td(on) TurnOn DelayTime 4 ns tr RiseTime 2 nsVDS = –10V,VGS = –4.5V,ID = –1A R G = 20Ωtd(off) TurnOffDelayTime 29 ns tf FallTime 12 ns Diode Characteristics VSD DiodeForwardVoltage IS = –1A,VGS = 0V –0.75 –1 V Q rr ReverseRecoveryCharge Vdd= –9.8V,IF = –1A,di/dt= 200A/ms 0.9 nC trr ReverseRecoveryTime Vdd= –9.8V,IF = –1A,di/dt= 200A/ms 8.2 ns THERMAL CHARACTERISTICS (TA = 25°C unlessotherwisestated) PARAMETER MIN TYP MAX UNIT ThermalResistanceJunctiontoAmbient(Minimum Cu area) 270 °C/W R qJA ThermalResistanceJunctiontoAmbient(1in2 Cu area) 105 °C/W

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P-Chan 1.0x1.5 CSP TTA MAX Rev1 M0156-01 P-Chan 1.0x1.5 CSP TTA MIN Rev1 tp – Pulse□Duration–s Z /c113JA – NormalizedThermal□Impedance G012 0.0001 0.01 0.1 0.001 0.1 0.05 0.01 0.02 0.5 0.3 Single□Pulse Duty□Cycle□=□t /t1 2 R/c113 /c113 /c113 JA J JA JA =□216 C/W□(min□Cu) T =□P x□Z x□R /c176 P CSD25301W1015 www.ti.com SLPS210B –AUGUST 2009–REVISED OCTOBER 2010 Max R qJA = 270°C/WMax R qJA = 105°C/W when mounted onwhen mounted on 1 minimum pad areaof2inch2 of2 oz.Cu. oz.Cu. TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unlessotherwisestated) Figure1. TransientThermal Impedance Copyright© 2009–2010,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLink(s):CSD25301W1015

−VDS − Drain to Source Voltage − V −ID − Drain Current − A G001 VGS = −4.5V VGS = −3V VGS = −1.5V VGS = −2V VGS = −2.5V −VGS − Gate to Source Voltage − V −ID − Drain Current − A G002 VDS = −5V TC = −55°C TC = 25°C TC = 125°C Q g − Gate Charge − nC −VG − Gate Voltage − V G003 ID = −1A VDS = −10V −VDS − Drain to Source Voltage − V 100 150 200 250 300 0 5 10 15 20 C − Capacitance − pF G004 f = 1MHz VGS = 0V C RSS = CGD C OSS = CDS + CGD C ISS = CGD + CGS TC − Case Temperature − °C 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 −75 −25 25 75 125 175 −VGS(th) − Threshold Voltage − V G005 ID = −250mA −VGS − Gate to Source Voltage − V 100 150 200 250 300 0 1 2 3 4 5 6 R DS(on) − On-State Resistance − mW G006 ID = −1A TC = 125°C TC = 25°C CSD25301W1015 SLPS210B –AUGUST 2009–REVISED OCTOBER 2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unlessotherwisestated) Figure2.SaturationCharacteristics Figure3.TransferCharacteristics Figure4.Gate Charge Figure5.Capacitance Figure6.ThresholdVoltagevs.Temperature Figure7.On Resistancevs.Gate Voltage

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TC − Case Temperature − °C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 −75 −25 25 75 125 175 Normalized On-State Resistance G007 ID = −1A VGS = −4.5V −VSD − Source to Drain Voltage − V −ISD − Source to Drain Current − A G008 0.1 0.001 0.0001 0.01 TC = 25°C TC = 125°C −V DS − Drain To□Source□Voltage − V G009 100 0.01 D − Drain□Current − A 0.1 0.1 10 1001 1ms 10ms 100ms DC Single□Pulse Rθ JA =□216 C/W□(min□Cu)/c176 Area□Limited by□RDS(on) TC − Case Temperature − °C 0.0 0.5 1.0 1.5 2.0 2.5 −50 −25 0 25 50 75 100 125 150 175 −ID − Drain Current − A G011 CSD25301W1015 www.ti.com SLPS210B –AUGUST 2009–REVISED OCTOBER 2010 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unlessotherwisestated) Figure8.On Resistancevs.Temperature Figure9.TypicalDiode Forward Voltage Figure10.Maximum Safe OperatingArea Figure11. Maximum DrainCurrentvs.Temperature Copyright© 2009–2010,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLink(s):CSD25301W1015

0.62 Max

0.50 0.50 1.00B 0.04 0.38 Solder Ball ±0.075Ø 0.311 12 2 Bottom ViewTop View Front View A B C A C 1.50 +0.00 –0.10 1.00 +0.00 –0.10 CSD25301W1015 SLPS210B –AUGUST 2009–REVISED OCTOBER 2010 www.ti.com MECHANICAL DATA NOTE: Alldimensionsareinmm (unlessotherwisespecified) Pinout POSITION DESIGNATION C1, C2 Drain A1 Gate A2,B1,B2 Source

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0.50 1 2 Ø 0.25 0.50 1.00B A C 1.75□±0.10 2°□Max 2°□Max M0159-01 8.00 +0.30 –0.10 Ø 0.60 +0.05 –0.10 4.00□±0.10 4.00□±0.10 3.50□±0.05 1.65□±0.05 1.19□±0.05 CSD25301W1015 www.ti.com SLPS210B –AUGUST 2009–REVISED OCTOBER 2010 Land PatternRecommendation NOTE: Alldimensionsareinmm (unlessotherwisespecified) Tape and Reel Information NOTE: Alldimensionsareinmm (unlessotherwisespecified) Copyright© 2009–2010,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLink(s):CSD25301W1015

SLPS210B –AUGUST 2009–REVISED OCTOBER 2010 www.ti.com

REVISION HISTORY

Changes from Original(August 2009)toRevisionA Page Changes from RevisionA (August 2010)toRevisionB Page

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*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 17-May-2012 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD25301W1015 DSBGA YZC 6 3000 210.0 185.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 17-May-2012 Pack Materials-Page 2

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