CSD25201W15 TI1 | Alldatasheet

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D DD D S S S S G Pin A1 Indicator Top View Symbol -VGS - Gate-to-Source Voltage - V RDS(on) - On-State Resistance - mΩ 0 1 2 3 4 5 6 100 TJ = 25°C TJ = 125°C G006 ID = -2A Qg - Gate Charge - nC -VGS - Gate-to-Source Voltage - V 0.5 1.5 2.5 3.5 4.5 G003 ID = -2A VDS = -10V CSD25201W15 www.ti.com SLPS269A –JUNE 2010–REVISED JULY 2011 P-Channel NexFET ™ Power MOSFET Check forSamples: CSD25201W15 PRODUCT SUMMARY 1FEATURES VDS DraintoDrainVoltage –20 V• Low Resistance Q g Gate Charge Total(–4.5V) 4.3 nC

  • Small Footprint1.5-mm × 1.5-mm Q gd Gate Charge Gate toDrain 0.7 nC
  • Gate ESD Protection–3kV VGS = –1.8V 52 m Ω
  • Pb Free R DS(on) DraintoSourceOn Resistance VGS = –2.5V 42 m Ω
  • RoHS Compliant VGS = –4.5V 33 m Ω
  • Halogen Free VGS(th) ThresholdVoltage –0.7 V
  • Gate-SourceVoltageClamp TextAdded For Spacing ORDERING INFORMATIONAPPLICATIONS Device Package Media Qty Ship• BatteryManagement 1.5-mm × 1.5-mm 7-Inch Tape andCSD25201W15 3000• BatteryProtection Wafer LevelPackage Reel Reel DESCRIPTION TextAdded For Spacing The devicehas been designedto deliverthe lowest ABSOLUTE MAXIMUM RATINGS on resistanceand gatechargeinthesmallestoutline TA = 25°C unlessotherwisestated VALUE UNIT possiblewithexcellentthermalcharacteristicsin an VDS DraintoSourceVoltage –20 V ultralow profile.Low on resistancecoupledwiththe VGS Gate toSourceVoltage –6 V smallfootprintand low profilemake thedeviceideal ContinuousDrainCurrent(1)(2) 4 Aforbatteryoperatedspace constrainedapplications. ID PulsedDrainCurrent(1)(2) 4 A ContinuousGate Current(1)(2) 0.5 A IG PulsedGate Current(1)(2) 7 A PD Power Dissipation(1) 1.5 W TJ, OperatingJunctionand Storage –55 to150 °CTSTG TemperatureRange (1) Based on Min Cu footprint (2) Balllimited R DS(on) vs VGS GATE CHARGE Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsofTexas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2010–2011,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SLPS269A –JUNE 2010–REVISED JULY 2011 www.ti.com These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unlessotherwisestated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT StaticCharacteristics BV DSS DraintoSourceVoltage VGS = 0V,IDS = –250μA –20 V BV GSS Gate toSourceVoltage VDS = 0V,IG = –250μA –6.1 –7.2 V IDDS DraintoSourceLeakage Current VGS = 0V,VDS = –16V –1 μA IGSS Gate toSourceLeakage Current VDS = 0V,VGS = –6V –100 nA VGS(th) Gate toSourceThresholdVoltage VDS = VGS ,IDS = –250μA –0.4 –0.7 –1.1 V VGS = –1.8V,IDS = –2A 52 70 m Ω R DS(on) DraintoSourceOn Resistance VGS = –2.5V,IDS = –2A 42 50 m Ω VGS = –4.5V,IDS = –2A 33 40 m Ω gfs Transconductance VDS = –10V,IDS = –2A 12 S Dynamic Characteristics C ISS InputCapacitance 490 640 pF VGS = 0V,VDS = –10V,C OSS OutputCapacitance 215 280 pFf= 1MHz C RSS ReverseTransferCapacitance 70 91 pF R G SeriesGate Resistance(1) 26 35 Ω Q g Gate Charge Total(–4.5V) 4.3 5.6 nC Q gd Gate Charge -Gate toDrain 0.7 nCVDS = –10V, IO = –2AQ gs Gate Charge -Gate toSource 1 nC Q g(th) Gate Charge atVth 0.3 nC Q OSS OutputCharge VDS = –9.5V,VGS = 0V 3.1 nC td(on) TurnOn DelayTime(2) 9.5 ns tr RiseTime(2) 11 nsVDS = –10V,VGS = –4.5V, IDS = –2A,R G = 2Ωtd(off) TurnOffDelayTime(2) 51 ns tf FallTime(2) 38 ns Diode Characteristics VSD DiodeForwardVoltage IDS = –2A,VGS = 0V 0.7 1 V Q rr ReverseRecoveryCharge 5.7 nCVDD = –9.5V,IF = –2A, di/dt= 200A/μstrr ReverseRecoveryTime 10 ns (1) Includesgateclamp resistor (2) ExternalR G isinadditiontotheinternalgateclamp resistor THERMAL CHARACTERISTICS (TA = 25°C unlessotherwisestated) PARAMETER MIN TYP MAX UNIT JunctiontoAmbientThermalResistance(1) 283 °C/W R θJA JunctiontoAmbientThermalResistance(2) 185 °C/W (1) Devicemounted on FR4 materialwithminimum Cu mountingarea. (2) Devicemounted on FR4 materialwith1-inch2 (6.45-cm2),2-oz.(0.071-mmthick)Cu.

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0.0001 0.01 0.1 1 10 100 1k 0.0001 0.01 0.1 G012 Z - Normalized Thermal Impedance/c113JA 0.001 0.001 Single Pulse 0.01 0.02 0.05 0.1 0.3 0.5 Duty Cycle = t /t1 2 Typical R = 227/c176C/W (min Cu)/c113JA T = P/c180 Z /c180 RJ /c113JA /c113JA P CSD25201W15 www.ti.com SLPS269A –JUNE 2010–REVISED JULY 2011 Max R θJA = 185°C/W Max R θJA = 283°C/W when mounted on when mounted on a 1 inch2 (6.45cm 2)of minimum pad areaof 2-oz.(0.071-mmthick) 2-oz.(0.071-mmthick) Cu. Cu. TYPICAL MOSFET CHARACTERISTICS TA = 25°C, unlessstatedotherwise. Figure1. TransientThermal Impedance Copyright© 2010–2011,Texas InstrumentsIncorporated 3

-VDS - Drain-to-Source Voltage - V -IDS - Drain-to-Source Current - A 0 0.25 0.5 0.75 1 VGS = -1.5V VGS = -2.5V VGS = -3.0V VGS = -4.0V VGS = -4.5V G001 -VGS - Gate-to-Source Voltage - V -IDS - Drain-to-Source Current - A TJ = -55°C TJ = 25°C TJ = 125°C G002 VDS = -5V Qg - Gate Charge - nC -VGS - Gate-to-Source Voltage - V 0.5 1.5 2.5 3.5 4.5 G003 ID = -2A VDS = -10V -VDS - Drain-to-Source Voltage - V C - Capacitance - nF 0 5 10 15 20 100 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd G004 f = 1MHz VGS = 0V C - Capacitance - pF TJ - Junction Temperature - °C -VGS(th) - Threshold Voltage - V -75 -25 25 75 125 175 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 0.3 0.5 0.7 0.9 G005 ID = -250µA -VGS - Gate-to-Source Voltage - V RDS(on) - On-State Resistance - mΩ 0 1 2 3 4 5 6 100 TJ = 25°C TJ = 125°C G006 ID = -2A CSD25201W15 SLPS269A –JUNE 2010–REVISED JULY 2011 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) TA = 25°C, unlessstatedotherwise. Figure2.SaturationCharacteristics Figure3.TransferCharacteristics Figure4.Gate Charge Figure5.Capacitance Figure6.ThresholdVoltagevs.Temperature Figure7.On-StateResistancevs.Gate-to-SourceVoltage

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TJ - Junction Temperature - °C Normalized On-State Resistance -75 -25 25 75 125 175 0.2 0.4 0.6 0.8 1.2 1.4 1.6 G007 ID = -2A VGS = -4.5V -VSD - Source-to-Drain Voltage - V -ISD - Source-to-Drain Current - A 0 0.2 0.4 0.6 0.8 1 0.001 0.01 0.1 TC = 25°C TC = 125°C G008 -VDS - Drain-to-Source Voltage - V 0.01 0.1 1 10 100 0.001 0.01 0.1 1ms 10ms 11110 DC 100ms G009 Area Limited by RDS(on) Single Pulse Typical RθJA = 227°C/W (min Cu) -IDS - Drain-to-Source Current - A TJ - Junction Temperature - °C -IDS - Drain-to-Source Current - A -50 -25 0 25 50 75 100 125 150 175 0.5 1.5 2.5 3.5 4.5 G011 CSD25201W15 www.ti.com SLPS269A –JUNE 2010–REVISED JULY 2011 TYPICAL MOSFET CHARACTERISTICS (continued) TA = 25°C, unlessstatedotherwise. Figure8.NormalizedOn-StateResistancevs.Temperature Figure9.TypicalDiode Forward Voltage Figure10.Maximum Safe OperatingArea Figure11. Maximum DrainCurrentvs.Temperature Copyright© 2010–2011,Texas InstrumentsIncorporated 5

Side□View 0.62□Max Pin□1 Mark Seating□Plate 0.50 0.50 1.00 0.04 0.62□Max 0.35 ±0.10 Solder□Ball ±0.075Ø□0.31 1 13 3 Bottom□ViewTop□View Front□View A C A C 2 2 B B 1.50 +0.00 –0.08 1.50 +0.00 –0.08 CSD25201W15 SLPS269A –JUNE 2010–REVISED JULY 2011 www.ti.com MECHANICAL DATA NOTE: Alldimensionsareinmm (unlessotherwisespecified) Pinout POSITION DESIGNATION A1 Gate A2,B1,B2,C1 Drain A3,B3,C2, C3 Source

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0.50 1 3 2 Ø□0.25 0.50 1.00B A C 1.75□±0.10 Ø□0.50□±0.05 M0173-01 8.00 +0.30 –0.10 4.00□±0.10 4.00□±0.10 3.50□±0.05 5°□Max 5°□Max 1.60□±0.05 1.60□±0.05 CSD25201W15 www.ti.com SLPS269A –JUNE 2010–REVISED JULY 2011 Recommended Land Pattern NOTE: Alldimensionsareinmm (unlessotherwisespecified) TextAdded For Spacing TextAdded For Spacing Tape and Reel Information NOTES: 1.10-sprockethole-pitchcumulativetolerance±0.2 2.Camber nottoexceed 1mm in100mm, noncumulativeover250mm 3.Material:blackstatic-dissipativepolystyrene 4.Alldimensionsareinmm (unlessotherwisespecified) 5.Thickness:0.30±0.05mm 6.MSL1 260°C (IRand convection)PbF reflowcompatible Copyright© 2010–2011,Texas InstrumentsIncorporated 7

SLPS269A –JUNE 2010–REVISED JULY 2011 www.ti.com

REVISION HISTORY

Changes from Original(June 2010)toRevisionA Page

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