CSD22204WT.B

CSD22204W TI | Alldatasheet

Document overview

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Technical content

-VGS - Gate-To-Source Voltage (V) R DS(on) - On-State Resistance (m/c3a) D007 TC = 25° C, ID = -2 A TC = 125° C, ID = -2 A Q g - Gate Charge (nC) -VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0.5 1.5 2.5 3.5 4.5 D004 ID = -2 A VDS = -4 V G S S S S S D D D Gate Source Drain Product Folder Sample & Buy T echnical Documents Tools & Software Support & Community CSD22204W SLPS559 –MARCH 2015 CSD22204W–8VP-ChannelNexFET™ PowerMOSFET

1 Features

1• Low Resistance TA = 25°C TYPICAL VALUE UNIT

• Small Footprint 1.5 mm × 1.5 mm VDS Drain-to-Source Voltage –8 V
• Pb Free Qg Gate Charge Total (–4.5 V) 18.9 nC Qgd Gate Charge Gate-to-Drain 4.2 nC• Gate ESD Protection VGS = –2.5 V 11.5 mΩ• RoHS Compliant RDS(on) Drain-to-Source On-Resistance VGS = –4.5 V 8.2 mΩ• Halogen Free VGS(th) Threshold Voltage –0.7 V
• Gate-Source Voltage Clamp Ordering Information(1)

2 Applications

Device Qty Media Package Ship

• Battery Management CSD22204W 3000 7-Inch Reel 1.5 mm × 1.5 mm Tape andWafer BGA• Battery Protection ReelCSD22204WT 250 7-Inch Reel Package
• Load Switch Applications (1) For all available packages, see the orderable addendum at the end of the data sheet.

3 Description

This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is . Absolute Maximum Ratingsdesigned to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent TA = 25°C VALUE UNIT thermal characteristics in an ultra low profile. Low on- VDS Drain-to-Source Voltage –8 V resistance coupled with the small footprint and low VGS Gate-to-Source Voltage –6 V profile make the device ideal for battery operated Continuous Drain Current(1) –5 A IDspace constrained applications. Pulsed Drain Current(2) –80 A PD Power Dissipation 1.7 WTop View and Circuit Configuration TJ, Operating Junction and –55 to 150 °CTstg Storage Temperature Range (1) Device operating at a temperature of 105ºC. (2) Typ RθJA = 75°C/W, Pulse width ≤100 μs, duty cycle ≤1%. RDS(on) vs VGS Gate Charge An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.

SLPS559 –MARCH 2015 www.ti.com Table of Contents

4 Revision History

March 2015 * Initial release.

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5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, IDS = –250 μA –8 V BVGSS Gate-to-Source Voltage VDS = 0 V, IG = –5 μA –6 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = –6.4 V –1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –6 V –4 μA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = –250 μA –0.45 –0.7 –0.95 V VGS = –2.5 V, IDS = –2 A 11.5 14.0 mΩ RDS(on) Drain-to-Source On-Resistance VGS = –4.5 V, IDS = –2 A 8.2 9.9 mΩ gƒs Transconductance VDS = –0.8 V, IDS = –2 A 18 S DYNAMIC CHARACTERISTICS CISS Input Capacitance 870 1130 pF VGS = 0 V, VDS = –4 V,COSS Output Capacitance 445 580 pFƒ = 1 MHz CRSS Reverse Transfer Capacitance 204 265 pF RG Series Gate Resistance 300 Ω Qg Gate Charge Total (–4.5 V) 18.9 24.6 nC Qgd Gate Charge - Gate-to-Drain 4.2 nCVDS = –4 V, ID = –2 AQgs Gate Charge - Gate-to-Source 3.2 nC Qg(th) Gate Charge at Vth 0.7 nC QOSS Output Charge VDS = –4 V, VGS = 0 V 3.1 nC td(on) Turn On Delay Time 58 ns tr Rise Time 600 nsVDS = –4 V, VGS = –4.5 V, IDS = –2 A, RG = 0 Ωtd(off) Turn Off Delay Time 3450 ns tƒ Fall Time 2290 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage IDS = –2 A, VGS = 0 V –0.7 –1.0 V

5.2 Thermal Information

(TA = 25°C unless otherwise stated) THERMAL METRIC TYPCIAL VALUES UNIT Junction-to-Ambient Thermal Resistance(1) 75 RθJA °C/W Junction-to-Ambient Thermal Resistance(2) 230 (1) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu. (2) Device mounted on FR4 material with minimum Cu mounting area. Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD22204W

Typ RθJA = 230°C/WTyp RθJA = 75°C/W when mounted onwhen mounted on minimum pad area of1inch2 of 2 oz. Cu. 2 oz. Cu.

5.3 Typical MOSFET Characteristics

Figure 1. Transient Thermal Impedance

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Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Figure 10. Maximum Safe Operating Area Figure 11. Maximum Drain Current vs Temperature

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6 Device and Documentation Support

6.1 Trademarks

NexFET is a trademark of Texas Instruments. All other trademarks are the property of their respective owners.

6.2 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

6.3 Glossary

SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: CSD22204W

Side□View 0.62□Max Pin□1 Mark Seating□Plate 0.50 0.50 1.00 0.04 0.62□Max 0.35 ±0.10 Solder□Ball ±0.075Ø□0.31 1 13 3 Bottom□ViewTop□View Front□View A C A C 2 2 B B 1.50 +0.00 –0.08 1.50 +0.00 –0.08 CSD22204W SLPS559 –MARCH 2015 www.ti.com

7 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation

7.1 CSD22204W Package Dimensions

NOTE: All dimensions are in mm (unless otherwise specified) Pinout POSITION DESIGNATION A1 Gate A2, A3, B1, B2, SourceB3 C1, C2, C3 Drain

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1.75□±0.10 Ø□0.50□±0.05 M0173-01 8.00 +0.30 –0.10 4.00□±0.10 4.00□±0.10 3.50□±0.05 5°□Max 5°□Max 1.60□±0.05 1.60□±0.05 M0172-01 0.50 1 3 2 Ø□0.25 0.50 1.00B A C CSD22204W www.ti.com SLPS559 –MARCH 2015

7.2 Recommended Land Pattern

NOTE: All dimensions are in mm (unless otherwise specified)

7.3 Tape and Reel Information

NOTES: 1. 10-sprocket hole-pitch cumulative tolerance ±0.2 2. Camber not to exceed 1mm in 100 mm, noncumulative over 250 mm 3. Material: black static-dissipative polystyrene 4. All dimensions are in mm (unless otherwise specified) 5. Thickness: 0.30 ±0.05 mm 6. MSL1 260°C (IR and convection) PbF reflow compatible Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Links: CSD22204W

www.ti.com 1-Dec-2015 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples CSD22204W ACTIVE DSBGA YZF 9 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM 22204 CSD22204WT ACTIVE DSBGA YZF 9 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM 22204 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

www.ti.com 1-Dec-2015 Addendum-Page 2 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

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