CSD16323Q3

CSD16323Q3 VBSEMI | Alldatasheet

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Technical content

N-Channel 30 V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  TrenchFET ® Power MOSFET  1 00 % Rg and UIS Tested  C ompliant to RoHS Directive 2002/95/EC

APPLICATIONS

 Motor Cont rol Industrial  Load Switch  ORing Notes: PRODUCT SUMMARY VDS (V) R DS(on) () Typ. ID (A) Qg (Typ.) 0.004 at VGS = 4.5 V 33.5 nC 0.005 at VGS = 2.5 V N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C , unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltag e VDS 30 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 40 TA = 25 °C 22b, c TA = 70 °C 15b, c Pulsed Drain Current (t = 300 µs) IDM 150 Continuous Source-Drain Diode Cu rrent TC = 25 °C IS TA = 25 °C 3.3b, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Single Pulse Avalanche Energy EAS 20 mJ Maximum P ower Dissipation TC = 25 °C PD WTC = 70 °C 33 TA = 25 °C 3.7b, c TA = 70 °C 2.4b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °CSoldering Recommendations (Peak T emperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maxim um Unit Maximum Junction-to-Ambientb, d t  10 s R thJA 24 33 °C/WMaximum J unction-to-Case (Drain) Steady State RthJC 1.9 2.4 a. Based on TC = 25 °C. b. Surfac e mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 80 A. a, e e Top V iew DFN 3x3 EP Top View Bottom View Pin 1 CSD16323Q3 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

Notes: Pulse test; pulse width  300 µs, duty cycle  2 % b. Guaranteed by design, not subject to production testing. Stresses beyond t hose listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Sym bol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient VDS/TJ ID = 250 µA 30 mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ - 5.6 Gate-Source Threshol d Voltage VGS(th) VDS = VGS , ID = 250 µA 0.5 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µAVDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) V DS 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS  4.5 V, ID = 10 A 0.0040 VGS 2.5 V, ID = 7 A 0.0050 Forward Tra nsconductancea gfs VDS = 15 V, ID = 10 A 65 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 3065 pFOutput Capacitance Coss 406 Reverse Transf er Capacitance Crss 360 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 10 A 68 102 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 33.5 51 Gate-Sou rce Charge Qgs 7.7 Gate-Drain Charg e Qgd 13.8 Gate Resista nce Rg f = 1 MHz 0.3 0.7 1.4  Tur n-On Delay Time td(on) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  24 45 ns Rise Time tr 24 45 Turn -Off Delay Time td(off) 32 60 Fall Time tf 12 24 Turn -On Delay Time td(on) VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  14 28 Rise Time tr 13 26 Turn -Off Delay Time td(off) 33 60 Fall Time tf 81 6 Drain-Source B ody Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 35 A Pulse Diode F orward Current ISM 70 Body Diode Voltage VSD IS = 3 A, VGS 0 V 0.7 1.1 V Body Diode Reve rse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 21 40 ns Body Diode Re verse Recovery Charge Qrr 10 20 nC Rev erse Recovery Fall Time ta 9 ns Reverse Recove ry Rise Time tb 12 CSD16323Q3 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

STICS (25 °C, unless otherwise noted) Output Characteristics On -Resistance vs. Drain Current and Gate Voltage Gate Charge 0 0.5 1 1.5 2 2.5 ID - Drain Current (A) VDS - Drain -to-Source Voltage (V) VGS = 3 V VGS = 10 V thru 4 V VGS = 2 V 0.0020 0.0040 0.0060 0.0080 0.0100 0.0120 0 12 24 36 48 60 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 14 28 42 56 70 VGS - Gate-to-S ource Voltage (V) Qg - Total Gate C harge (nC) VDS = 15 V VDS = 20 V VDS = 10 V ID = 10 A Transfer Characteristics Capacitance On -Resistance vs. Junction Temperature ID - Drain Current (A) VGS - Gate-to-S ource Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 900 1800 2700 3600 4500 0 5 10 15 20 25 30 C - Capacitance (pF) VDS - Drain-to- Source Voltage (V) Ciss Coss Crss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 RDS(on) - On-Resistance (Normalized) TJ - Junction Temperature (°C) ID = 10 A VGS = 10 V VGS = 4.5 V CSD16323Q3 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diod e Forward Voltage Threshold Voltage 0.001 0.01 0.1 100 IS - Source Current (A VSD - Sour ce-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C -0 . 8 -0 .6 . 4 -0 . 2 0.2 0.4 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 VGS(th) - Variance (V) TJ -T e m pe r a t u r e (°C) ID = 250 μA ID = 5 mA On-Resistance vs. Gate-to-Source Voltage S ingle Pulse Power, Junction-to-Ambient 0.000 0.003 0.006 0.009 0.012 0.015 02468 1 0 RDS(on) - On-Resistance (Ω) VGS - Gate-to-S ource Voltage (V) TJ = 125 °C TJ = 25 °C ID = 10 A 100 0.001 0.01 0.1 1 10 100 Power (W) Time (s) Safe Operating Area, Junct ion-to-Ambient 0.01 0.1 100 0.01 0.1 1 10 100 ID - Drain Cur rent (A) VDS - Drain-to- Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 μs 100 ms Limited by RDS(on)* 1 ms IDM Limited TA = 25 °C Single Pu lse BVDSS Limi ted 10 ms 10 s 1 s DC ID Limited CSD16323Q3 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

STICS (25 °C, unless otherwise noted) * The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 100 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Limited by Package Power, Juncti on-to-Case 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power, Junction -to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power (W) CSD16323Q3 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transi ent Impedance, Junction-to-Ambient 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Effective Transient Thermal Im pedance Square Wave Pulse Dur ation (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pu lse Notes: PDM 1. Duty Cycle, D = Per Unit Base = RthJA = 81 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface M ounted Normalized Thermal Transient Impedance, Junction-to-Case 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 Normalized E ffective Transient Thermal Impedance Square Wave Pulse Dur ation (s) Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Puls e CSD16323Q3 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. CSD16323Q3 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw A ll data sheet.com