CSD-4M CENTRAL | Alldatasheet
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SILICON CONTROLLED RECTIFIERS
4.0 AMP, 600 THRU 800 VOLT
DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-4M and CSD-4N are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CSD-4M CSD-4N UNITS Peak Repetitive Off-State Voltage V DRM, VRRM 600 800 V RMS On-State Current (TC=85°C) I T(RMS) 4.0 A Peak One Cycle Surge Current, t=10ms I TSM 30 A I 2t Value for Fusing, t=10ms I 2t 4.5 A 2s Peak Gate Power, tp=20μs P GM 3.0 W Average Gate Power Dissipation P G(AV) 0.2 W Peak Gate Current, tp=20μs I GM 1.2 A Critical Rate of Rise of On-State Current di/dt 50 A/μs Operating Junction Temperature T J -40 to +125 °C Storage Temperature T stg -40 to +150 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated V DRM, VRRM, RGK=1KΩ 10 μA IDRM, IRRM Rated V DRM, VRRM, RGK=1KΩ, TC=125°C 200 μA IGT V D=12V, RL=10Ω 20 38 200 μA IH I T=50mA, RGK=1KΩ 0.25 2.0 mA VGT V D=12V, RL=10 0.55 0.8 V VTM I TM=8.0A, tp=380μs 1.6 1.8 V dv/dt V D= 2/3 VDRM, RGK=1KΩ, TC=125°C 10 V/μs DPAK CASE R2 (21-January 2013) www.centralsemi.com
SILICON CONTROLLED RECTIFIERS DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER www.centralsemi.com R2 (21-January 2013)