CSD669 MULTICOMP | Alldatasheet

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Page <1> V1.023/02/24 Single Bipolar Transistor Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Absolute Maximum Ratings (Ta = 25°C Unless otherwise specified) Parameter Symbol CSB649 CSD669 CSB649A Unit Collector-base voltage (open emitter) VCBO 180 V Collector-emitter voltage (open base) VCEO 160 Collector current IC 1.5 A Total power dissipation up to TC = 25°C PC 20 W Junction temperature Tj 150 °C Emitter-base voltage (open collector) VEBO 5 V Collector current (peak) ICP 3 A Total power dissipation up to TA = 25°C PC 1 W Storage temperature Tstg 65 to +150 °C Application

  • Low frequency Power Amplifier Features: 1. This product is available in AEC-Q101 Compliant and PPAP Capable also. Parameter Symbol Test Condition Min./Min CSB649 CSD669 CSB649A Unit Collector Cut off Current I CBO IE = 0; VCB = 160V Max 10 μA Breakdown voltages VCEO IC = 10mA; IB = 0 120 160 V IC = 1mA; IE = 0 180 VEBO IE = 1mA; IC = 0 5 Saturation voltage VCEsat IC = 500mA; IB = 50mA 1 Base-emitter voltage VBE (on) IC = 150mA; VCE = 5V 1.5 DC Current Gain hFE IC = 150mA; VCE = 5V Min 60 Max 320 200 IC = 500mA; VCE = 5V Min 30 Transition frequency fT IC = 150mA; VCE = 5V Typ

140 MHz

VCB = 10 V; IE = 0; f = 1 MHz PNP 27 pF NPN 14 Electrical Characteristics at (Ta = 25°C Unless otherwise specified)

Page <3> V1.023/02/24 Single Bipolar Transistor Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Dimensions : Millimetres Reflow profiles in tabular form Profile Feature Sn-Pb System Pb-Free System Average Ramp-Up Rate ~3°C/second ~3°C/second Preheat – Temperature Range – Time 150-170°C 60-180 seconds 150-200°C 60-180 seconds Time maintained above: – Temperature – Time 200°C 30-50 seconds 217°C 60-150 seconds Peak Temperature 235°C 260°C max. Time within +0 -5°C of actual Peak 10 seconds 40 seconds Ramp-Down Rate 3°C/second max. 6°C/second max. The Recommended solder Profile For Devices with Pb-free terminal plating where a Pb-free solder is used The Recommended solder Profile For Devices with Pb-free terminal plating used with leaded solder, or for devices with leaded terminal plating used with leaded solder Wave Profiles in Tabular Form Profile Feature Sn-Pb System Pb-Free System Average Ramp-Up Rate ~200°C/second ~200°C/second Heating rate during preheat Typical 1-2, Max 4°C/sec Typical 1-2, Max 4°C/Sec Final preheat Temperature Within 125°C of Solder Temp Within 125°C of Solder Temp Peak Temperature 235°C 260°C max. Time within +0 -5°C of actual Peak 10 seconds 10 seconds Ramp-Down Rate 5°C/second max. 5°C/second max. Recommended Wave Solder Profiles

Page <4> V1.023/02/24 Single Bipolar Transistor Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Typical Characteristics Curves

Page <5> V1.023/02/24 Single Bipolar Transistor Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Important Notice : This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. Part Number Table Description Part Number Single Bipolar Transistor, PNP, 160V, 1500mA, 20W, TO-126 CSB649 Single Bipolar Transistor, PNP, 160V, 1500mA, 20W, TO-126 CSB649A Single Bipolar Transistor, NPN, 160V, 1500mA, 20W, TO-126 CSD669Dimensions : Millimetres TO-126 Leaded Plastic Package DIM MIN MAX A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E 2.25 TYP. F 0.49 G 4.5 TYP. L 15.7 TYP. M 1.27 TYP. N 3.75 TYP. P 3 3.2 S 2.5 TYP.