CSB20S45CT-A CITC | Alldatasheet

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■ Features ■ Mechanical data ■ Maximum ratings and electrical characteristics O Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. ■ Outline Low forward voltage drop.• Excellent high temperature stability.• Fast switching capability.• Suffix "G" indicates Halogen-free part, ex.CSΒ20S4 G-A.• 5CT Lead-free parts meet environmental standards of • MIL-STD-19500 /228

  • Epoxy : UL94-V0 rated flame retardant.
  • Case : JEDEC TO-220AB molded plastic body over passivated chip.
  • Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed. .• Polarity: Color band denotes cathode end .• Mounting Position : Any .• Weight : Approximated 2.25 gram IO IFSM IRRM T , TJ STG Forward rectified current (total device) Forward surge current (per diode) Thermal resistance(1) Operating and Storage temperature Parameter 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Conditions Symbol UNIT -55 ~ +150 200 A A O C/W O C 4RθJCJunction to case Peak repetitive reverse surge current A2us - 1kHz 3 VF IR Forward voltage drop (per diode) Reverse current (per diode) Parameter O V = V T = 25 CR RRM J O V = V T = 125 CR RRM J Conditions Symbol TYP. UNIT 100 0.5 mV mA MIN. MAX. Marking code O I = 10A, T = 25 CF J O I = 10A, T = 125 CF J 440 470 O I = 20A, T = 25 CF J 600 DC blocking voltage Working peak reverse voltage Peak repetitive reverse voltage VRM VRWM VRRM V CSB20S45CT-A CSB20S45CT (per diode) CSB20S45CT-A Document ID : DS-11KDZ Revised Date : 2015/08/11 Revision : C1 D PAK(TO-263) Marking code 0.411(10.45) 0.380(9.65) 0.228(5.80) 0.173(4.40) 0.370(9.40) 0.320(8.13) 0.205(5.20) 0.189(4.80) 0.063(1.60) 0.011(0.28) 0.055(1.40) 0.045(1.14) 0.190(4.83) 0.160(4.06) 0~0.012(0~0.30) 0.110(2.79) 0.090(2.29) 0.055(1.40) 0.031(0.80) PIN 1 PIN 3 PIN 2 1 3 0.245(6.22) MIN 0.067(1.70)MAX 360 Chip Integration Technology Corporation Super Low Barrier High Voltage Power Rectifier Main Product Characteristics IF(AV) 2x10A VRRM TJ V(Typ) 45V O 150 C 0.36V

■ Rating and characteristic curves Fig. 2 - Instantaneous Forward Characteristics (per diode) Instantaneous Forward Voltage (Volts) Instantaneous Forward Current (A) 100 0.1 0.01 T =25°CA T =75°CA T =100°CA T =150°CA T =125°CA Reverse Voltage (V) Fig. 3 - Reverse Characteristics (per diode) Instantaneous Reverse Current (mA) 0 10 20 30 40 50 1000 100 0.1 0.01 O T =25 CA O T =75 CA O T =100 CA O T =150 C A O T =125 CA CSB20S45CT-A Chip Integration Technology Corporation Super Low Barrier High Voltage Power Rectifier Document ID : DS-11KDZ Revised Date : 2015/08/11 Revision : C1 Fig.1 - Forward Current Derating Curve (total device) Average Forward Current,I (A)F(AV) 0 25 50 75 100 125 150 175 O Case Temperature,T ( C)C single phase half wave 60Hz resistive or inductive load

■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final■ design, purchase or use. CITC makes no warranty, representation or guarantee regarding the suitability of its products for any■ particular purpose, nor does CITC assume any liability for application assistance or customer product design. CITC does not warrant or accept any liability with products which are purchased or used for any■ unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of CITC.■ CITC products are not authorized for use as critical components in life support devices or systems■ without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 CSB20S45CT-A Chip Integration Technology Corporation Super Low Barrier High Voltage Power Rectifier Document ID : DS-11KDZ Revised Date : 2015/08/11 Revision : C1