CS92B CENTRAL | Alldatasheet
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SILICON CONTROLLED RECTIFIER
0.8 AMP, 200 THRU 800 VOLTS
Semiconductor Corp. TM R3 (22-April 2004) DESCRIPTION: The CENTRAL SEMICONDUCTOR CS92B series type is an epoxy molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CS92B CS92D CS92M CS92N UNITS Peak Repetitive Off-State Voltage V DRM, VRRM 200 400 600 800 V RMS On-State Current (TC=90°C) I T(RMS) 0.8 A Peak One Cycle Surge (t=10ms) I TSM 10 A I2t Value for Fusing (t=10ms) I 2t 0.24 A 2s Peak Gate Power (tp=10µs) P GM 2.0 W Average Gate Power Dissipation P G (AV) 0.1 W Peak Gate Current (tp=10µs) I GM 1.0 A Peak Gate Voltage (tp=10µs) V GM 8.0 V Storage Temperature T stg -40 to +150 °C Junction Temperature T J -40 to +125 °C Thermal Resistance ΘJA 200 °C/W Thermal Resistance ΘJC 100 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM Rated VDRM, VRRM, RGK=1KΩ 1.0 µA IDRM, IRRM Rated VDRM, VRRM, RGK=1KΩ, TC=125°C 100 µA IGT VD=12V 200 µA IH IT=100mA, RGK=1KΩ 5.0 mA VGT VD=12V 0.8 V VTM ITM=1.0A, tp=380µs 1.7 V dv/dt V D= 2/3 VDRM, RGK=1KΩ, TC=125°C 25 V/µs
A (DIA) 0.175 0.205 4.45 5.21 B 0.170 0.210 4.32 5.33 C 0.500 - 12.70 - D 0.016 0.022 0.41 0.56 E F G 0.125 0.165 3.18 4.19 H 0.080 0.105 2.03 2.67 I TO-92 (REV: R1) 0.015 0.38 DIMENSIONS SYMBOL INCHES MILLIMETERS 0.100 2.54 0.050 1.27 Central Semiconductor Corp. TM TO-92 CASE - MECHANICAL OUTLINE CS92B CS92D CS92M CS92N SILICON CONTROLLED RECTIFIER R3 (22-April 2004) LEAD CODE: 1) CATHODE 2) GATE 3) ANODE MARKING CODE: FULL PART NUMBER