CS8120 ONSEMI | Alldatasheet
Document overview
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Technical content
Features
- 5.0 V ±4.0% Output V oltage 300 mA
- Low Dropout V oltage (1.0 V @ 150 mA)
- Low Quiescent Current (2.5 mA @ IOUT = 150 mA)
- P Compatible Control Functions − RESET − ENABLE
- Low Current Sleep Mode − IQ = 250 A
- Fault Protection − Thermal Shutdown − Short Circuit − 60 V Load Dump TO−220−5 T SUFFIX CASE 314D TO−220−5 TVA SUFFIX CASE 314K TO−220−5 THA SUFFIX CASE 314A See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
See general marking information in the device marking section on page 10 of this data sheet. DEVICE MARKING INFORMATION D 2PAK−5 DP SUFFIX CASE 936AC SO−14 D SUFFIX CASE 751A DIP−8 N SUFFIX CASE 626 http://onsemi.com
Figure 1. Block Diagram − TO−220−5
- 60 second maximum above 183°C.
*The maximum package power dissipation must be observed.
http://onsemi.com ELECTRICAL CHARACTERISTICS (VIN = 14 V, IOUT = 5.0 mA; −40 ≤ TJ ≤ 150°C, −40°C ≤ TC ≤ 125°C, unless otherwise noted.) Note 3 Characteristic Test Conditions Min Typ Max Unit Output Stage Line Regulation 7.0 V ≤ VIN ≤ 26 V, IOUT = 200 mA − − 50 mV Load Regulation 1.0 mA ≤ IOUT ≤ 300 mA − − 50 mV Supply Voltage Rejection VIN = 14 VDC + 1.0 VRMS @ 120Hz LOAD = 25 40 70 − dB Dropout Voltage IOUT = 200 mA − 1.0 1.5 V Quiescent Current ENABLE = High, VIN = 12 V ENABLE = Low, IOUT = 200 mA 0.25 2.5 0.65 mA mA Protection Circuits Short Circuit Current − 300 600 − mA Thermal Shutdown − 150 190 − °C Overvoltage Shutdown − 26 40 − V RESET RESET Saturation Voltage 1.0 V < VOUT < VRT(OFF), 3.1 k Pull−Up to VOUT − 0.1 0.4 V RESET Output Leakage Current ENABLE = Low, VOUT > VRT(ON), VRESET = VOUT − 0 25 A Power ON/OFF RESET Peak Output Voltage 3.1 k Pull−Up to VOUT − 0.7 1.0 V RESET Threshold HIGH (VRH ) LOW (V RL) VOUT Increasing VOUT Decreasing 4.75 VOUT − 0.10 VOUT − 0.14 VOUT − 0.04 V V RESET Threshold Hysteresis − 10 40 − mV ENABLE Input High Voltage 7.0 V < VIN < 26 V − 2.9 3.9 V Input Low Voltage 7.0 V < VIN < 26 V 1.1 2.1 − V Input Hysteresis 7.0 V < VIN < 26 V 0.4 0.8 2.8 V Input Current GND < VIN(HI) < VOUT −10 0 +10 A 3. To have safe operating junction temperatures, low duty cycle pulse testing is used on tests where applicable.
1 2 1 1 VIN Supply voltage to IC, usually direct from the battery. in a high impedance state when ENABLE is high. 3 8 13 3 GND Ground Connection. 5 1 14 5 VOUT Regulated output voltage, 5.0 V (Typ). Figure 2. Output Voltage vs. Temperature
4.95 VOUT (V)
Figure 3. Load Regulation vs. Output
5.0 V @ 25°C
Figure 4. Line Regulation vs. Output Figure 5. Dropout Voltage vs. Output Figure 6. Quiescent Current vs. Output
0 VOUT (V)
0.0 Quiescent Current (mA)
Figure 7. Output Voltage and Supply Figure 8. RESET Output Voltage vs.
Figure 12. RC Network for RESET Delay Circuitry
5.0 V to P
V T = P logic threshold voltage. functions before power is removed. The logic options are summarized in Table 1. Table 1. Logic Control of CS8120 Output connected to the ignition switch. Figure 13. Microprocessor Control of CS8120 Using External Switching Transistor Q1
start−up delay, load transient response and loop stability. manufacturers data sheet usually provides this information. necessarily the optimized solution. Figure 14. Circuit Showing Output *C1 is required if regulator is far from the power source filter. **C2 is required for stability.
5.0 V to P and
design under steady state conditions. conditions for the regulator at low temperature. working environment. Vary the ESR to reduce ringing. step 5 to test for any oscillations. 50% of the maximum allowable ESR found in step 3 above. the die temperature below 150°C.
http://onsemi.com Figure 15. Single Output Regulator With Key A heat sink effectively increases the surface area of the package to improve the flow of heat away from the IC and into the surrounding air. Each material in the heat flow path between the IC and the outside environment will have a thermal resistance. Like series electrical resistances, these resistances are summed to determine the value of R JA. R JA R JC R CS R SA (3) where: R JC = the junction−to−case thermal resistance, R CS = the case−to−heatsink thermal resistance, and R SA = the heatsink−to−ambient thermal resistance. R JC appears in the package section of the data sheet. Like R JA, it too is a function of package type. RCS and RSA are functions of the package type, heatsink and the interface between them. These values appear in heat sink data sheets of heat sink manufacturers.
http://onsemi.com Device Description Shipping† CS8120YT5 TO−220−5 50 Units/Rail CS8120YTVA5 TO−220−5 50 Units/Rail CS8120YTHA5 TO−220−5 HORIZONTAL 50 Units/Rail CS8120YN8 DIP−8 50 Units/Rail CS8120YDP5 D 2PAK−5 50 Units/Rail CS8120YDPR5 D 2PAK−5 750 Tape & Reel CS8120YD14 SO−14 55 Units/Rail CS8120YDR14 SO−14 2500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi- cations Brochure, BRD8011/D. MARKING DIAGRAMS A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week TO−220−5 T SUFFIX CASE 314D CS8120 AWLYWW TO−220−5 TVA SUFFIX CASE 314K CS8120 AWLYWW TO−220−5 THA SUFFIX CASE 314A CS8120 AWLYWW CS8120 AWL YYWW DIP−8 N SUFFIX CASE 626 CS8120 AWLYWW D 2PAK−5 DP SUFFIX CASE 936F SO−14 D SUFFIX CASE 751A CS8120 AWLYWW
http://onsemi.com PACKAGE DIMENSIONS TO−220−5 T SUFFIX CASE 314D−04 ISSUE E −Q− 12345 U K D G A B 5 PL J H L E C MQM0.356 (0.014) T SEATING PLANE−T− DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.572 0.613 14.529 15.570 B 0.390 0.415 9.906 10.541 C 0.170 0.180 4.318 4.572 D 0.025 0.038 0.635 0.965 E 0.048 0.055 1.219 1.397 G 0.067 BSC 1.702 BSC H 0.087 0.112 2.210 2.845 J 0.015 0.025 0.381 0.635 K 0.990 1.045 25.146 26.543 L 0.320 0.365 8.128 9.271 Q 0.140 0.153 3.556 3.886 U 0.105 0.117 2.667 2.972 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION D DOES NOT INCLUDE INTERCONNECT BAR (DAMBAR) PROTRUSION. DIMENSION D INCLUDING PROTRUSION SHALL NOT EXCEED 10.92 (0.043) MAXIMUM. TO−220−5 TVA SUFFIX CASE 314K−01 ISSUE O K FU A B G M0.356 (0.014) Q MT J L E C R SEATING PLANE
5 PLD
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION D DOES NOT INCLUDE INTERCONNECT BAR (DAMBAR) PROTRUSION. DIMENSION D, INCLUDING PROTRUSION, SHALL NOT EXCEED 10.92 (0.043) MAXIMUM. 12345 −T− M W S DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.560 0.590 14.22 14.99 B 0.385 0.415 9.78 10.54 C 0.160 0.190 4.06 4.83 D 0.027 0.037 0.69 0.94 E 0.045 0.055 1.14 1.40 F 0.530 0.545 13.46 13.84 G 0.067 BSC 1.70 BSC J 0.014 0.022 0.36 0.56 K 0.785 0.800 19.94 20.32 L 0.321 0.337 8.15 8.56 M 0.063 0.078 1.60 1.98 Q 0.146 0.156 3.71 3.96 R 0.271 0.321 6.88 8.15 S 0.146 0.196 3.71 4.98 U 0.460 0.475 11.68 12.07 W 5 5 −Q−
http://onsemi.com PACKAGE DIMENSIONS TO−220−5 THA SUFFIX CASE 314A−03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION D DOES NOT INCLUDE INTERCONNECT BAR (DAMBAR) PROTRUSION. DIMENSION D INCLUDING PROTRUSION SHALL NOT EXCEED 0.043 (1.092) MAXIMUM. DIM A MIN MAX MIN MAX MILLIMETERS 0.572 0.613 14.529 15.570 INCHES B 0.390 0.415 9.906 10.541 C 0.170 0.180 4.318 4.572 D 0.025 0.038 0.635 0.965 E 0.048 0.055 1.219 1.397 F 0.570 0.585 14.478 14.859 G 0.067 BSC 1.702 BSC J 0.015 0.025 0.381 0.635 K 0.730 0.745 18.542 18.923 L 0.320 0.365 8.128 9.271 Q 0.140 0.153 3.556 3.886 S 0.210 0.260 5.334 6.604 U 0.468 0.505 11.888 12.827 −T− SEATING PLANE L S E C F K J OPTIONAL CHAMFER D5X MPM0.014 (0.356) T G AU B Q −P− D 2PAK−5 DP SUFFIX CASE 936AC−01 ISSUE O For D2PAK Outline and Dimensions − Contact Factory
http://onsemi.com PACKAGE DIMENSIONS SO−14 D SUFFIX CASE 751A−03 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. −A− −B− G P 7 PL 14 8 71 M0.25 (0.010) B M SBM0.25 (0.010) A ST −T− FR X 45 SEATING PLANE D 14 PL K C JM DIM MIN MAX MIN MAX INCHESMILLIMETERS A 8.55 8.75 0.337 0.344 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 BSC 0.050 BSC J 0.19 0.25 0.008 0.009 K 0.10 0.25 0.004 0.009 M 0 7 0 7 P 5.80 6.20 0.228 0.244 R 0.25 0.50 0.010 0.019 DIP−8 N SUFFIX CASE 626−05 ISSUE L NOTES: 1. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 2. PACKAGE CONTOUR OPTIONAL (ROUND OR SQUARE CORNERS). 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. F NOTE 2 −A− −B− −T− SEATING PLANE H J G D K N C L M MAM0.13 (0.005) B MT DIM MIN MAX MIN MAX INCHESMILLIMETERS A 9.40 10.16 0.370 0.400 B 6.10 6.60 0.240 0.260 C 3.94 4.45 0.155 0.175 D 0.38 0.51 0.015 0.020 F 1.02 1.78 0.040 0.070 G 2.54 BSC 0.100 BSC H 0.76 1.27 0.030 0.050 J 0.20 0.30 0.008 0.012 K 2.92 3.43 0.115 0.135 L 7.62 BSC 0.300 BSC M --- 10 --- 10 N 0.76 1.01 0.030 0.040 PACKAGE THERMAL DATA Parameter TO−220−5 D 2PAK−5 DIP−8 SO−14 Unit R JC Typical 3.1 3.1 52 30 °C/W R JA Typical 50 10−50* 100 125 °C/W * Depending on thermal properties of substrate. RJA = RJC + RCA
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