CS7N65A YFWDIODE | Alldatasheet
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1 / 6 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. N-CHANNEL ENHANCEMENT MODE POWER MOSFET MAIN CHARACTERISTICS ID 7A VDSS 650V RDSON-typ(@VGS=10V) 1.06Ω
FEATURES
100% Single Pulse avalanche energy Test Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: Molded plastic Mounting Position: Any Molded Plastic: UL Flammability Classification Rating 94V-0 Solder bath temperature275℃maximum,10s per JESD22-106 Case: TO-220AB TO-220F TO-263 TO-252 TO-251 PRODUCT SPECIFICATION CLASSIFICATION Part Number Package Mode Name Pack CS7N65A1 TO-220AB CS7N65A Tube CS7N65A2 TO-220F(0.5mm) CS7N65A Tube CS7N65A3 TO-263 CS7N65A Tube CS7N65A3-R TO-263 CS7N65A Tape CS7N65A4 TO-251 CS7N65A Tube CS7N65A5-R TO-252 CS7N65A Tape
2 / 6 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Maximum Ratings at Tc=25° C unless otherwise specified Characteristics Symbols Value Units 220AB/263 220F 251/252 Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Continue Drain Current ID 7 A Pulsed Drain Current (Note1) IDM 28 A Power Dissipation PD 100 35 100 W Single Pulse Avalanche Energy (Note1) EAS 350 mJ Operating Temperature Range TJ 150 °C Storage Temperature Range TSTG -55 to +150 °C Thermal Resistance, Junction to Case RθJC 1.25 3.57 1.25 ° C/W Thermal Resistance, Junction to Ambient RθJA 62.5 62.5 100 ° C/W Note1:Pulse test: 300 μs pulse width, 2 % duty cycle Maximum Ratings at Tc=25° C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V,ID = 250 μA BVDSS 650 680 - V Drain-Source Leakage Current VDS = 650 V, VGS = 0 V IDSS - - 1 UA Gate Leakage Current VGS = ± 30 V, VDS = 0 V IGSS - - ±100 nA Gate-Source Threshold Voltage VDS = VGS , ID = 250 μA VGS(th) 2 - 4 V Drain-Source On-State Resistance VGS = 10 V, ID = 3.5 A RDS(on) - 1.06 1.4 Ω Forward Transconductance VDS = 15 V, ID = 3.5 A gfs - 6.5 - S Input Capacitance VGS = 0 V, VDS = 2 V, f = 200 KHz Ciss - 1334 - pF Output Capacitance Coss - 92 - pF Reverse Transfer Capacitance Crss - 5 - pF Turn-on Delay Time(Note2) ID = 7 A, VDD = 325 V, RG= 10Ω td(ON) - 18 - nS Rise Time(Note2) tr - 19 - nS Turn-Off Delay Time(Note2) td(OFF) - 39 - nS Fall Time(Note2) tf - 18 - nS Total Gate Charge(Note2) ID = 7 A, VDD = 520 V, VGS = 10 V QG - 23 - nC Gate to Source Charge(Note2) QGS - 5 - nC Gate to Drain Charge(Note2) QGD - 9 - nC Source-Drain Diode Characteristics at Ta=25° C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units Maximun Body-Diode Continuous Current Tj=25° C IS - - 7 A Maximun Body-Diode Pulsed Current(Note2) ISM - - 28 A Drain-Source Diode Forward Voltage ISD = 7 A VSD - - 1.4 V Reverse Recovery Time(Note2) ISD = 7 A, VGS = 0 V, dIF / dt = 100 A/μs trr - 370 - nS Reverse Recovery Charge(Note2) Qrr - 1.9 - uC Note2:Pulse test: 300 μs pulse width, 2 % duty cycle
3 / 6 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. RATINGS AND CHARACTERISTIC CURVES
4 / 6 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Package Outline Dimensions millimeters
5 / 6 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd.
6 / 6 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd.