CS48N78 THINKISEMI | Alldatasheet
Document overview
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Technical content
Features
- VDS=70V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V
- Special Designed for E-Bike Controller Application
- Ultra Low On-Resistance
- High UIS and UIS 100% Test Application
- 48V E-Bike Controller Applications
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Table 1. Absolute Maximum Ratings (TA=25℃) © 2006 Thinki Semiconductor Co.,Ltd.
Table 2. Thermal Characteristic Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) © 2006 Thinki Semiconductor Co.,Ltd.
1）EAS Test Circuits 2）Gate Charge Test Circuit: 3）Switch Time Test Circuit： © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 3/5Rev.05 CS48N78
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure1. Safe Operating Area Figure2. Source-Drain Diode Forward Voltage Figure3. Output Characteristics Figure4. Transfer Characteristics Figure5. Static Drain-Source On Resistance Figure6. RDS(ON) vs Junction Temperature RDS(ON) (mΩ) ID IS - Source Current (A) ID (A) VDS (Volts) VSD (Volts) ID (A) VDS (Volts) ID (A) VGS (Volts) R DS(ON) 10us 1ms 10ms DC Tc = 25℃ © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 4/5Rev.05 CS48N78
Figure7. BVDSS vs Junction Temperature Figure8. VGS(th) vs Junction Temperature T emperature（℃） T emperature （℃） T emperature （℃） Figure9. Gate Charge Waveforms Figure10. Capacitance Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) V DS Drain- Source Voltage (V) Transient Thermal Impedance R(t), Normalized Effective C Capacitance (pF) Qg Gate Charge (nC) VGS (Volts) © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 5/5Rev.05 CS48N78