CS48N18 THINKISEMI | Alldatasheet
Document overview
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Technical content
Features
- VDS=70V；ID=158A@ VGS=10V； RDS(ON)<4.2mΩ @ VGS=10V
- Special Designed for E-Bike Controller Application
- Ultra Low On-Resistance
- High UIS and UIS 100% Test Application
- 48V E-Bike Controller Applications
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Table 1. Absolute Maximum Ratings (TA=25℃) © 2006 Thinki Semiconductor Co.,Ltd.
Table 2. Thermal Characteristic Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) © 2006 Thinki Semiconductor Co.,Ltd.
1）EAS Test Circuits 2）Gate charge Test Circuit: 3）Switch Time Test Circuit： © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 3/5Rev.05 CS48N18
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure1. Safe Operating Area Figure2. Source-Drain Diode Forward Voltage Figure3. Output C haracteristics Figure4. Transfer Characteristics Figure5. Static Drain-Source On Resistance Figure6. RDS(ON) vs Junction Temperature ID (A) VDS (Volts) IS - Source Current (A) VSD (Volts) © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 4/5Rev.05 CS48N18
Figure7. BVDSS vs Junction Temperature Figure8. VGS(th) vs Junction Temperature T emperature（℃） T emperature（℃） Figure9. Gate Charge Waveforms Figure10. Capacitance Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) R(t), Normalized Effective Transient Thermal Impedance 0 40 80 120 160 VGS (Volts) C Capacitance (pF) 1000 2000 3000 4000 5000 6000 7000 8000 0 0 5 10 15 20 25 VDS Drain-Source Voltage (V) © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 5/5Rev.05 CS48N18