CS299 ONSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- DC Current Gain 1000
- 80 V Breakdown V oltage
- Reverse Battery Protection
Figure 1. Block Diagram
ORDERING INFORMATION
CS299H Flip Chip Contact Sales PIN CONNECTIONS Flip Chip Bump Side Up Bump Side Down B GND
http://onsemi.com MAXIMUM RATINGS* Rating Value Unit Storage Temperature Range, TS –65 to +150 °C Ambient Operating Temperature –40 to 140 °C Collector Breakdown Voltage 80 V *The maximum package power dissipation must be observed. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified.) Characteristic Test Conditions Min Typ Max Unit Supply Requirements Saturation Voltage IB1 = 0.6 mA, IC2 = 350 mA TJ = –30°C TJ = 150°C 0.60 0.55 0.65 V V V Collector Breakdown Voltage IC1 = IC2 = 1.0 mA, RBE = 200, VC1 = VC2 80 – – V Collector Cut Off Current (ICEO ) VCE1 = VCE2 = 60 V, RBE = 200 – – 10 µA DC Current Gain (HFE) VC1 =VC2 = 1.0 V, IB1 = 100 µA 1000 – – (IC1 + IC2 )/IB1 NPN β (Q1) IB1 = 1.0 µA, VCE2 = 0 V, VCE1 = 1.5 V 50 – – IC1 /IB1 VBE (in saturation) IB1 = 0.6 mA, IC1 = 50 mA, IC2 = 350 mA – – 2.0 V Diode Forward Voltage (D1) ID1 = 25 mA 0.5 – 1.5 V PACKAGE PIN DESCRIPTION PIN SYMBOL FUNCTIONPIN SYMBOL FUNCTION B Base of input darlington. C1 Collector of darlington input device. C2 Collector of darlington output driver. GND Ground. Emitter of dartlington driver. Base/Emitter resistor and substrate are also connected here.
Figure 2. Typical Application DIagram *Note: C2 optional for reduced jitter.
Figure 3. Flip Chip Dimensions and Solder Bump Locations, Bump Side Up Note: All dimensions are in inches. validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.